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In this work, vertical NiO/Ga₂O₃ heterojunction diodes (HJDs) integrated with SiN_{<italic>x</italic>}/Al₂O₃ double-layered insulating field plate (FP) structures have been demonstrated. With the additional post-annealing, the resultant diode exhibits a decreased differential specific on-resistance (<inline-formula> <tex-math notation="LaTeX">$\text{R}_{\mathrm{ on,sp}}$ </tex-math></inline-formula>) of 5.4 <inline-formula> <tex-math notation="LaTeX">$\text{m}\boldsymbol{\Omega } \cdot $ </tex-math></inline-formula>cm² and an enhanced breakdown voltage (BV) of 1036 V. The improved performance is attributed by the combination of the FP-suppressed crowding electric field at the device edge and the reduced trap density at the NiO/Ga₂O₃ interface. In particular, the near-unity ideality factor has been achieved for this p-n HJD at an elevated temperature of 275 &#x00B0;C, indicating that the diffusion current is dominated. The high-temperature operation capability is owing to the quality improvement of NiO/Ga₂O₃ interface, where the Shockley-Read-Hall (SRH) recombination mediated by deep-level defects within the depletion region is thus suppressed.