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The aim of this paper is to establish the importance of a linearly graded profile in the drift region of a 4H-SiC Schottky barrier diode (SBD). The power dissipation of the device is found to be considerably lower at any given current density as compared to its value obtained for a uniformly doped drift region. The corresponding values of breakdown voltages obtained are similar to those obtained with uniformly doped wafers of 4H-SiC.