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In this letter, high-performance Al2O3/<inline-formula> <tex-math notation="LaTeX">$\beta$ </tex-math></inline-formula>-Ga2O3 (001) metal-insulator-semiconductor (MIS) capacitor has been demonstrated. The capacitance-voltage (C&#x2013;V) curves of the Al2O3/<inline-formula> <tex-math notation="LaTeX">$\beta$ </tex-math></inline-formula>-Ga2O3 (001) MIS capacitor remain stable under different measurement frequencies. The leakage current density is lower than <inline-formula> <tex-math notation="LaTeX">$2.0 \times 10^{-8}$ </tex-math></inline-formula> A/cm2 when the gate voltage is in the range of &#x2212;5&#x007E;13 V. The fixed charge and trapped charge densities in Al2O3 film are <inline-formula> <tex-math notation="LaTeX">$4.4 \times 10^{12}$ </tex-math></inline-formula> and <inline-formula> <tex-math notation="LaTeX">$6.0 \times 10^{11}$ </tex-math></inline-formula> cm&#x2212;2, respectively. Average and minimum interface trapped charge density (<inline-formula> <tex-math notation="LaTeX">${\mathrm {D}}_{it}$ </tex-math></inline-formula>) for Al2O3/<inline-formula> <tex-math notation="LaTeX">$\beta$ </tex-math></inline-formula>-Ga2O3 (001) interface has been extracted to be as low as <inline-formula> <tex-math notation="LaTeX">$3.3 \times 10^{11}$ </tex-math></inline-formula> and <inline-formula> <tex-math notation="LaTeX">$2.3 \times 10^{11}$ </tex-math></inline-formula> cm&#x2212;2 eV&#x2212;1 via the Terman method, respectively. The low <inline-formula> <tex-math notation="LaTeX">${\mathrm {D}}_{it}$ </tex-math></inline-formula> is probably attributed to the modification of vacancy defects and the introduction of hydroxyl groups at the Al2O3/<inline-formula> <tex-math notation="LaTeX">$\beta$ </tex-math></inline-formula>-Ga2O3 (001) interface after piranha solution pretreatment for <inline-formula> <tex-math notation="LaTeX">$\beta$ </tex-math></inline-formula>-Ga2O3.