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Performance Comparison of Lattice-Matched AlInN/GaN/AlGaN/GaN Double-Channel Metal–Oxide–Semiconductor High-Electron Mobility Transistors with Planar Channel and Multiple-Mesa-Fin-Channel Array
oleh: Hsin-Ying Lee, Ying-Hao Ju, Jen-Inn Chyi, Ching-Ting Lee
Format: | Article |
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Diterbitkan: | MDPI AG 2021-12-01 |
Deskripsi
In this work, Al<sub>0.83</sub>In<sub>0.17</sub>N/GaN/Al<sub>0.18</sub>Ga<sub>0.82</sub>N/GaN epitaxial layers used for the fabrication of double-channel metal–oxide–semiconductor high-electron mobility transistors (MOSHEMTs) were grown on silicon substrates using a metalorganic chemical vapor deposition system (MOCVD). A sheet electron density of 1.11 × 10<sup>13</sup> cm<sup>−2</sup> and an electron mobility of 1770 cm<sup>2</sup>/V-s were obtained. Using a vapor cooling condensation system to deposit high insulating 30-nm-thick Ga<sub>2</sub>O<sub>3</sub> film as a gate oxide layer, double-hump transconductance behaviors with associated double-hump maximum extrinsic transconductances (g<sub>mmax</sub>) of 89.8 and 100.1 mS/mm were obtained in the double-channel planar MOSHEMTs. However, the double-channel devices with multiple-mesa-fin-channel array with a g<sub>mmax</sub> of 148.9 mS/mm exhibited single-hump transconductance behaviors owing to the better gate control capability. Moreover, the extrinsic unit gain cutoff frequency and maximum oscillation frequency of the devices with planar channel and multiple-mesa-fin-channel array were 5.7 GHz and 10.5 GHz, and 6.5 GHz and 12.6 GHz, respectively. Hooge’s coefficients of 7.50 × 10<sup>−5</sup> and 6.25 × 10<sup>−6</sup> were obtained for the devices with planar channel and multiple-mesa-fin-channel array operating at a frequency of 10 Hz, drain–source voltage of 1 V, and gate–source voltage of 5 V, respectively.