Dual-Storage-Port Nonvolatile SRAM Based on Back-End-of-the-Line Processed Hf<sub>0.5</sub>Zr<sub>0.5</sub>O₂ Ferroelectric Capacitors Towards 3D Selector-Free Cross-Point Memory
oleh: Hao Jiang, Owen Li, Wenliang Chen, T. P. Ma
| Format: | Article |
|---|---|
| Diterbitkan: | IEEE 2020-01-01 |
Deskripsi
This work presents the design and experimental demonstration of a novel dual-storage-port nonvolatile SRAM based on back-end-of-the-line processed Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub>-based metal-ferroelectric-metal capacitors, which offers significant advantages over the conventional single-storage-port version without area penalty, and paves the way for implementing our proposed selector-free 3D cross-point memory.