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Abstract An AlGaN/GaN lateral reverse blocking current regulating diode (RB-CRD) with trench Schottky anode and hybrid trench cathode has been proposed and experimentally demonstrated on silicon substrate. The Schottky barrier diode (SBD) integrated in the anode exhibits a turn-on voltage of 0.7 V and a reverse breakdown voltage of 260 V. The hybrid trench cathode acts as a CRD, which is in series connection with the anode SBD. A knee voltage of 1.3 V and a forward operation voltage beyond 200 V can be achieved for the RB-CRD. The RB-CRD is capable of outputting an excellent steady current in a wide temperature range from 25 to 300 °C. In addition, the forward regulating current exhibits small negative temperature coefficients less than − 0.152%/oC.