Memory phototransistors based on exponential-association photoelectric conversion law
oleh: Zhibin Shao, Tianhao Jiang, Xiujuan Zhang, Xiaohong Zhang, Xiaofeng Wu, Feifei Xia, Shiyun Xiong, Shuit-Tong Lee, Jiansheng Jie
| Format: | Article |
|---|---|
| Diterbitkan: | Nature Portfolio 2019-03-01 |
Deskripsi
CdS nanostructures can enable memory based photodetection by charge-storage accumulative effect. Here, the authors report CdS nanoribbons-based memory phototransistors with high responsivity of 3.8 × 109 A/W and detectivity of 7.7 × 1022 Jones that can detect weak light of 6 nW/cm2.