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Source-Pull and Load-Pull Characterization of Graphene FET
oleh: Sebastien Fregonese, Magali de Matos, David Mele, Cristell Maneux, Henri Happy, Thomas Zimmer
Format: | Article |
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Diterbitkan: | IEEE 2015-01-01 |
Deskripsi
This paper presents the characterization of a GFET transistor using a source-pull/load-pull test set. The characterization shows that despite the good f<sub>T</sub> and f<sub>MAX</sub>, it is hard to achieve power gain using the GFET device within a circuit configuration. This is due to the very high impedance at the gate making impedance matching at the input extremely difficult. S-parameter characterization is performed and the associated small signal model is developed in order to further analyse and extrapolate the source-pull and load-pull measurement results. A good agreement is observed between small signal model simulation results and source-pull/load-pull measurements. Finally, the model is used to evaluate the optimum power gain of the transistor in a circuit configuration under matched conditions.