Monolayer optical memory cells based on artificial trap-mediated charge storage and release

oleh: Juwon Lee, Sangyeon Pak, Young-Woo Lee, Yuljae Cho, John Hong, Paul Giraud, Hyeon Suk Shin, Stephen M. Morris, Jung Inn Sohn, SeungNam Cha, Jong Min Kim

Format: Article
Diterbitkan: Nature Portfolio 2017-03-01

Deskripsi

Memory devices are key building blocks of image sensing circuitry. Here, the authors demonstrate a MoS2monolayer optoelectronic memory device based on charge trapping and subsequent optically-induced charge release, capable of 12-bit operation.