Hasil Pencarian - Zhiliang Xia

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  1. 1
    Self-Adaption of the GIDL Erase Promotes Stacking More Layers in 3D NAND Flash

    Self-Adaption of the GIDL Erase Promotes Stacking More Layers in 3D NAND Flash oleh Tao Yang, Bao Zhang, Qi Wang, Lei Jin, Zhiliang Xia

    Diterbitkan 2023-03-01
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  2. 2
    Analysis and Optimization of Threshold Voltage Variability by Polysilicon Grain Size Simulation in 3D NAND Flash Memory

    Analysis and Optimization of Threshold Voltage Variability by Polysilicon Grain Size Simulation in 3D NAND Flash Memory oleh Tao Yang, Zhiliang Xia, Dandan Shi, Yingjie Ouyang, Zongliang Huo

    Diterbitkan 2020-01-01
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  3. 3
    A Novel Capacitorless 1T DRAM with Embedded Oxide Layer

    A Novel Capacitorless 1T DRAM with Embedded Oxide Layer oleh Dongxue Zhao, Zhiliang Xia, Tao Yang, Yuancheng Yang, Wenxi Zhou, Zongliang Huo

    Diterbitkan 2022-10-01
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  4. 4
    Hydrogen Source and Diffusion Path for Poly-Si Channel Passivation in Xtacking 3D NAND Flash Memory

    Hydrogen Source and Diffusion Path for Poly-Si Channel Passivation in Xtacking 3D NAND Flash Memory oleh Xinshuai Shen, Zhiliang Xia, Tao Yang, Lei Liu, Jinwen Dong, Wenxi Zhou, Chunlong Li, Zongliang Huo

    Diterbitkan 2020-01-01
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  5. 5
    An Improved Dimensional Measurement Method of Staircase Patterns With Higher Precision in 3D NAND

    An Improved Dimensional Measurement Method of Staircase Patterns With Higher Precision in 3D NAND oleh Peizhen Hong, Zhiguo Zhao, Jun Luo, Zhiliang Xia, Xiaojing Su, Libin Zhang, Chunlong Li, Zongliang Huo

    Diterbitkan 2020-01-01
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  6. 6
    Optimization of Bump Defect at High-Concentration <italic>In-Situ</italic> Phosphorus Doped Polysilicon/TEOS Oxide Interface for 3D NAND Flash Memory Application

    Optimization of Bump Defect at High-Concentration <italic>In-Situ</italic> Phosphorus Doped Polysilicon/TEOS Oxide Interface for 3D NAND Flash Memory Application oleh Dongxue Zhao, Zhiliang Xia, Linchun Wu, Tao Yang, Dongyu Fan, Yuancheng Yang, Lei Liu, Wenxi Zhou, Zongliang Huo

    Diterbitkan 2021-01-01
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  7. 7
    Activation Enhancement and Grain Size Improvement for Poly-Si Channel Vertical Transistor by Laser Thermal Annealing in 3D NAND Flash

    Activation Enhancement and Grain Size Improvement for Poly-Si Channel Vertical Transistor by Laser Thermal Annealing in 3D NAND Flash oleh Tao Yang, Zhiliang Xia, Dongyu Fan, Dongxue Zhao, Wei Xie, Yuancheng Yang, Lei Liu, Wenxi Zhou, Zongliang Huo

    Diterbitkan 2023-01-01
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