Hasil Pencarian Pengarang :: Library Catalog

1

Efficiency Enhancement of Multicrystalline Silicon Solar Cells by Inserting Two-Step Growth Thermal Oxide to the Surface Passivation Layer oleh Shun Sing Liao, Yueh Chin Lin, Chuan Lung Chuang, Edward Yi Chang

Diterbitkan 2017-01-01

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2

Improvement of AlGaN/GaN High-Electron-Mobility Transistor Radio Frequency Performance Using Ohmic Etching Patterns for Ka-Band Applications oleh Ming-Wen Lee, Cheng-Wei Chuang, Francisco Gamiz, Edward-Yi Chang, Yueh-Chin Lin

Diterbitkan 2023-12-01

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3

Improvement of AlGaN/GaN HEMTs Linearity Using Etched-Fin Gate Structure for Ka Band Applications oleh Ming-Wen Lee, Yueh-Chin Lin, Heng-Tung Hsu, Francisco Gamiz, Edward-Yi Chang

Diterbitkan 2023-04-01

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4

High linearity AlGaN/GaN HEMTs with Au-free Ti/Al/Ni/Ti ohmic contacts for Ka-band applications oleh Che-Wei Hsu, Yueh-Chin Lin, Shao-Lun Lee, Kai-Wen Chen, Ying-Ciao Chen, Edward Yi Chang

Diterbitkan 2024-01-01

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5

$High-Performance LPCVD-SiNx/InAlGaN/GaN MIS-HEMTs With 850-V 0.98-<inline-formula> <tex-math notation="LaTeX">$\text{m}{\Omega} \cdot$ </tex-math></inline-formula>cm2 for Power Device Applications$

High-Performance LPCVD-SiNx/InAlGaN/GaN MIS-HEMTs With 850-V 0.98-<inline-formula> <tex-math notation="LaTeX">$\text{m}{\Omega} \cdot$ </tex-math></inline-formula>cm<sup... oleh Huan-Chung Wang, Franky Juanda Lumbantoruan, Ting-En Hsieh, Chia-Hsun Wu, Yueh-Chin Lin, Edward Yi Chang

Diterbitkan 2018-01-01

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6

Improvement of AlGaN/GaN HEMT Noise Figure Using Thick Cu Metallization for Satellite Communication Applications oleh Howie Tseng, Yueh-Chin Lin, Chieh Cheng, Po-Wei Chen, Heng-Tung Hsu, Yi-Fan Tsao, Edward Yi Chang

Diterbitkan 2024-01-01

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7

A Tall Gate Stem GaN HEMT With Improved Power Density and Efficiency at Ka-Band oleh Ping-Hsun Lee, Yueh-Chin Lin, Heng-Tung Hsu, Yi-Fan Tsao, Chang-Fu Dee, Pin Su, Edward Yi Chang

Diterbitkan 2023-01-01

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8

Noise Performance Investigation of AlGaN/GaN HEMT With Tall Gate Stem for Millimeter-Wave LNA Application oleh Ping-Hsun Lee, Yueh-Chin Lin, Heng-Tung Hsu, Cheng-Hsien Yu, Yi-Fan Tsao, Pin Su, Edward Yi Chang

Diterbitkan 2023-01-01

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9

Adoption of the Wet Surface Treatment Technique for the Improvement of Device Performance of Enhancement-Mode AlGaN/GaN MOSHEMTs for Millimeter-Wave Applications oleh Chun Wang, Yu-Chiao Chen, Heng-Tung Hsu, Yi-Fan Tsao, Yueh-Chin Lin, Chang-Fu Dee, Edward-Yi Chang

Diterbitkan 2021-11-01

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10

Evaluation of a 100-nm Gate Length E-Mode InAs High Electron Mobility Transistor With Ti/Pt/Au Ohmic Contacts and Mesa Sidewall Channel Etch for High-Speed and Low-Power Logic Appl... oleh Jing-Neng Yao, Yueh-Chin Lin, Heng-Tung Hsu, Kai-Chun Yang, Hisang-Hua Hsu, Simon M. Sze, Edward Yi Chang

Diterbitkan 2018-01-01

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11

Over 10W/mm High Power Density AlGaN/GaN HEMTs With Small Gate Length by the Stepper Lithography for Ka-Band Applications oleh Ming-Wen Lee, Yueh-Chin Lin, Po-Sheng Chang, Yi-Fan Tsao, Heng-Tung Hsu, Chang-Fu Dee, Edward Yi Chang

Diterbitkan 2023-01-01

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12

Study of the interface stability of the metal (Mo, Ni, Pd)/HfO2/AlN/InGaAs MOS devices oleh Huy Binh Do, Quang Ho Luc, Minh Thien Huu Ha, Sa Hoang Huynh, Tuan Anh Nguyen, Yueh Chin Lin, Edward Yi Chang

Diterbitkan 2017-08-01

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13

Study of tri-gate AlGaN/GaN MOS-HEMTs for power application oleh Kuan Ning Huang, Yueh Chin Lin, Jin Hwa Lee, Chia Chieh Hsu, Jing Neng Yao, Chieh Ying Wu, Chao Hsin Chien, Edward Yi Chang

Diterbitkan 2020-11-01

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14

InGaAs Junctionless FinFETs With Self-Aligned Ni-InGaAs S/D oleh Po-Chun Chang, Chih-Jen Hsiao, Franky Juanda Lumbantoruan, Chia-Hsun Wu, Yen-Ku Lin, Yueh-Chin Lin, Simon M. Sze, Edward Yi Chang

Diterbitkan 2018-01-01

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15

Effective Passivation With High-Density Positive Fixed Charges for GaN MIS-HEMTs oleh Shih-Chien Liu, Chung-Kai Huang, Chia-Hua Chang, Yueh-Chin Lin, Bo-Yuan Chen, Szu-Ping Tsai, Burhanuddin Yeop Majlis, Chang-Fu Dee, Edward Yi Chang

Diterbitkan 2017-01-01

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16

AlGaN/GaN MIS-HEMTs With High Quality ALD-Al2O3 Gate Dielectric Using Water and Remote Oxygen Plasma As Oxidants oleh Huan-Chung Wang, Ting-En Hsieh, Yueh-Chin Lin, Quang Ho Luc, Shih-Chien Liu, Chia-Hsun Wu, Chang Fu Dee, Burhanuddin Yeop Majlis, Edward Yi Chang

Diterbitkan 2018-01-01

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17

Normally-OFF GaN MIS-HEMT With F− Doped Gate Insulator Using Standard Ion Implantation oleh Chia-Hsun Wu, Ping-Cheng Han, Quang Ho Luc, Ching-Yi Hsu, Ting-En Hsieh, Huan-Chung Wang, Yen-Ku Lin, Po-Chun Chang, Yueh-Chin Lin, Edward Yi Chang

Diterbitkan 2018-01-01

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18

A Novel GaN:C Millimeter-Wave HEMT with AlGaN Electron-Blocking Layer oleh You-Chen Weng, Yueh-Chin Lin, Heng-Tung Hsu, Min-Lu Kao, Hsuan-Yao Huang, Daisuke Ueda, Minh-Thien-Huu Ha, Chih-Yi Yang, Jer-Shen Maa, Edward-Yi Chang, Chang-Fu Dee

Diterbitkan 2022-01-01

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Efficiency Enhancement of Multicrystalline Silicon Solar Cells by Inserting Two-Step Growth Thermal Oxide to the Surface Passivation Layer oleh Shun Sing Liao, Yueh Chin Lin, Chuan Lung Chuang, Edward Yi Chang

Improvement of AlGaN/GaN High-Electron-Mobility Transistor Radio Frequency Performance Using Ohmic Etching Patterns for Ka-Band Applications oleh Ming-Wen Lee, Cheng-Wei Chuang, Francisco Gamiz, Edward-Yi Chang, Yueh-Chin Lin

Improvement of AlGaN/GaN HEMTs Linearity Using Etched-Fin Gate Structure for Ka Band Applications oleh Ming-Wen Lee, Yueh-Chin Lin, Heng-Tung Hsu, Francisco Gamiz, Edward-Yi Chang

High linearity AlGaN/GaN HEMTs with Au-free Ti/Al/Ni/Ti ohmic contacts for Ka-band applications oleh Che-Wei Hsu, Yueh-Chin Lin, Shao-Lun Lee, Kai-Wen Chen, Ying-Ciao Chen, Edward Yi Chang

High-Performance LPCVD-SiN<sub>x</sub>/InAlGaN/GaN MIS-HEMTs With 850-V 0.98-<inline-formula> <tex-math notation="LaTeX">$\text{m}{\Omega} \cdot$ </tex-math></inline-formula>cm<sup... oleh Huan-Chung Wang, Franky Juanda Lumbantoruan, Ting-En Hsieh, Chia-Hsun Wu, Yueh-Chin Lin, Edward Yi Chang

Improvement of AlGaN/GaN HEMT Noise Figure Using Thick Cu Metallization for Satellite Communication Applications oleh Howie Tseng, Yueh-Chin Lin, Chieh Cheng, Po-Wei Chen, Heng-Tung Hsu, Yi-Fan Tsao, Edward Yi Chang

A Tall Gate Stem GaN HEMT With Improved Power Density and Efficiency at Ka-Band oleh Ping-Hsun Lee, Yueh-Chin Lin, Heng-Tung Hsu, Yi-Fan Tsao, Chang-Fu Dee, Pin Su, Edward Yi Chang

Noise Performance Investigation of AlGaN/GaN HEMT With Tall Gate Stem for Millimeter-Wave LNA Application oleh Ping-Hsun Lee, Yueh-Chin Lin, Heng-Tung Hsu, Cheng-Hsien Yu, Yi-Fan Tsao, Pin Su, Edward Yi Chang

Adoption of the Wet Surface Treatment Technique for the Improvement of Device Performance of Enhancement-Mode AlGaN/GaN MOSHEMTs for Millimeter-Wave Applications oleh Chun Wang, Yu-Chiao Chen, Heng-Tung Hsu, Yi-Fan Tsao, Yueh-Chin Lin, Chang-Fu Dee, Edward-Yi Chang

Evaluation of a 100-nm Gate Length E-Mode InAs High Electron Mobility Transistor With Ti/Pt/Au Ohmic Contacts and Mesa Sidewall Channel Etch for High-Speed and Low-Power Logic Appl... oleh Jing-Neng Yao, Yueh-Chin Lin, Heng-Tung Hsu, Kai-Chun Yang, Hisang-Hua Hsu, Simon M. Sze, Edward Yi Chang

Over 10W/mm High Power Density AlGaN/GaN HEMTs With Small Gate Length by the Stepper Lithography for Ka-Band Applications oleh Ming-Wen Lee, Yueh-Chin Lin, Po-Sheng Chang, Yi-Fan Tsao, Heng-Tung Hsu, Chang-Fu Dee, Edward Yi Chang

Study of the interface stability of the metal (Mo, Ni, Pd)/HfO2/AlN/InGaAs MOS devices oleh Huy Binh Do, Quang Ho Luc, Minh Thien Huu Ha, Sa Hoang Huynh, Tuan Anh Nguyen, Yueh Chin Lin, Edward Yi Chang

Study of tri-gate AlGaN/GaN MOS-HEMTs for power application oleh Kuan Ning Huang, Yueh Chin Lin, Jin Hwa Lee, Chia Chieh Hsu, Jing Neng Yao, Chieh Ying Wu, Chao Hsin Chien, Edward Yi Chang

InGaAs Junctionless FinFETs With Self-Aligned Ni-InGaAs S/D oleh Po-Chun Chang, Chih-Jen Hsiao, Franky Juanda Lumbantoruan, Chia-Hsun Wu, Yen-Ku Lin, Yueh-Chin Lin, Simon M. Sze, Edward Yi Chang

Effective Passivation With High-Density Positive Fixed Charges for GaN MIS-HEMTs oleh Shih-Chien Liu, Chung-Kai Huang, Chia-Hua Chang, Yueh-Chin Lin, Bo-Yuan Chen, Szu-Ping Tsai, Burhanuddin Yeop Majlis, Chang-Fu Dee, Edward Yi Chang

AlGaN/GaN MIS-HEMTs With High Quality ALD-Al<sub>2</sub>O<sub>3</sub> Gate Dielectric Using Water and Remote Oxygen Plasma As Oxidants oleh Huan-Chung Wang, Ting-En Hsieh, Yueh-Chin Lin, Quang Ho Luc, Shih-Chien Liu, Chia-Hsun Wu, Chang Fu Dee, Burhanuddin Yeop Majlis, Edward Yi Chang

Normally-OFF GaN MIS-HEMT With F<sup>−</sup> Doped Gate Insulator Using Standard Ion Implantation oleh Chia-Hsun Wu, Ping-Cheng Han, Quang Ho Luc, Ching-Yi Hsu, Ting-En Hsieh, Huan-Chung Wang, Yen-Ku Lin, Po-Chun Chang, Yueh-Chin Lin, Edward Yi Chang

A Novel GaN:C Millimeter-Wave HEMT with AlGaN Electron-Blocking Layer oleh You-Chen Weng, Yueh-Chin Lin, Heng-Tung Hsu, Min-Lu Kao, Hsuan-Yao Huang, Daisuke Ueda, Minh-Thien-Huu Ha, Chih-Yi Yang, Jer-Shen Maa, Edward-Yi Chang, Chang-Fu Dee

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Hasil Pencarian - Yueh Chin Lin

Efficiency Enhancement of Multicrystalline Silicon Solar Cells by Inserting Two-Step Growth Thermal Oxide to the Surface Passivation Layer oleh Shun Sing Liao, Yueh Chin Lin, Chuan Lung Chuang, Edward Yi Chang

Improvement of AlGaN/GaN High-Electron-Mobility Transistor Radio Frequency Performance Using Ohmic Etching Patterns for Ka-Band Applications oleh Ming-Wen Lee, Cheng-Wei Chuang, Francisco Gamiz, Edward-Yi Chang, Yueh-Chin Lin

Improvement of AlGaN/GaN HEMTs Linearity Using Etched-Fin Gate Structure for Ka Band Applications oleh Ming-Wen Lee, Yueh-Chin Lin, Heng-Tung Hsu, Francisco Gamiz, Edward-Yi Chang

High linearity AlGaN/GaN HEMTs with Au-free Ti/Al/Ni/Ti ohmic contacts for Ka-band applications oleh Che-Wei Hsu, Yueh-Chin Lin, Shao-Lun Lee, Kai-Wen Chen, Ying-Ciao Chen, Edward Yi Chang

High-Performance LPCVD-SiN<sub>x</sub>/InAlGaN/GaN MIS-HEMTs With 850-V 0.98-<inline-formula> <tex-math notation="LaTeX">$\text{m}{\Omega} \cdot$ </tex-math></inline-formula>cm<sup... oleh Huan-Chung Wang, Franky Juanda Lumbantoruan, Ting-En Hsieh, Chia-Hsun Wu, Yueh-Chin Lin, Edward Yi Chang

Improvement of AlGaN/GaN HEMT Noise Figure Using Thick Cu Metallization for Satellite Communication Applications oleh Howie Tseng, Yueh-Chin Lin, Chieh Cheng, Po-Wei Chen, Heng-Tung Hsu, Yi-Fan Tsao, Edward Yi Chang

A Tall Gate Stem GaN HEMT With Improved Power Density and Efficiency at Ka-Band oleh Ping-Hsun Lee, Yueh-Chin Lin, Heng-Tung Hsu, Yi-Fan Tsao, Chang-Fu Dee, Pin Su, Edward Yi Chang

Noise Performance Investigation of AlGaN/GaN HEMT With Tall Gate Stem for Millimeter-Wave LNA Application oleh Ping-Hsun Lee, Yueh-Chin Lin, Heng-Tung Hsu, Cheng-Hsien Yu, Yi-Fan Tsao, Pin Su, Edward Yi Chang

Adoption of the Wet Surface Treatment Technique for the Improvement of Device Performance of Enhancement-Mode AlGaN/GaN MOSHEMTs for Millimeter-Wave Applications oleh Chun Wang, Yu-Chiao Chen, Heng-Tung Hsu, Yi-Fan Tsao, Yueh-Chin Lin, Chang-Fu Dee, Edward-Yi Chang

Evaluation of a 100-nm Gate Length E-Mode InAs High Electron Mobility Transistor With Ti/Pt/Au Ohmic Contacts and Mesa Sidewall Channel Etch for High-Speed and Low-Power Logic Appl... oleh Jing-Neng Yao, Yueh-Chin Lin, Heng-Tung Hsu, Kai-Chun Yang, Hisang-Hua Hsu, Simon M. Sze, Edward Yi Chang

Over 10W/mm High Power Density AlGaN/GaN HEMTs With Small Gate Length by the Stepper Lithography for Ka-Band Applications oleh Ming-Wen Lee, Yueh-Chin Lin, Po-Sheng Chang, Yi-Fan Tsao, Heng-Tung Hsu, Chang-Fu Dee, Edward Yi Chang

Study of the interface stability of the metal (Mo, Ni, Pd)/HfO2/AlN/InGaAs MOS devices oleh Huy Binh Do, Quang Ho Luc, Minh Thien Huu Ha, Sa Hoang Huynh, Tuan Anh Nguyen, Yueh Chin Lin, Edward Yi Chang

Study of tri-gate AlGaN/GaN MOS-HEMTs for power application oleh Kuan Ning Huang, Yueh Chin Lin, Jin Hwa Lee, Chia Chieh Hsu, Jing Neng Yao, Chieh Ying Wu, Chao Hsin Chien, Edward Yi Chang

InGaAs Junctionless FinFETs With Self-Aligned Ni-InGaAs S/D oleh Po-Chun Chang, Chih-Jen Hsiao, Franky Juanda Lumbantoruan, Chia-Hsun Wu, Yen-Ku Lin, Yueh-Chin Lin, Simon M. Sze, Edward Yi Chang

Effective Passivation With High-Density Positive Fixed Charges for GaN MIS-HEMTs oleh Shih-Chien Liu, Chung-Kai Huang, Chia-Hua Chang, Yueh-Chin Lin, Bo-Yuan Chen, Szu-Ping Tsai, Burhanuddin Yeop Majlis, Chang-Fu Dee, Edward Yi Chang

AlGaN/GaN MIS-HEMTs With High Quality ALD-Al<sub>2</sub>O<sub>3</sub> Gate Dielectric Using Water and Remote Oxygen Plasma As Oxidants oleh Huan-Chung Wang, Ting-En Hsieh, Yueh-Chin Lin, Quang Ho Luc, Shih-Chien Liu, Chia-Hsun Wu, Chang Fu Dee, Burhanuddin Yeop Majlis, Edward Yi Chang

Normally-OFF GaN MIS-HEMT With F<sup>&#x2212;</sup> Doped Gate Insulator Using Standard Ion Implantation oleh Chia-Hsun Wu, Ping-Cheng Han, Quang Ho Luc, Ching-Yi Hsu, Ting-En Hsieh, Huan-Chung Wang, Yen-Ku Lin, Po-Chun Chang, Yueh-Chin Lin, Edward Yi Chang

A Novel GaN:C Millimeter-Wave HEMT with AlGaN Electron-Blocking Layer oleh You-Chen Weng, Yueh-Chin Lin, Heng-Tung Hsu, Min-Lu Kao, Hsuan-Yao Huang, Daisuke Ueda, Minh-Thien-Huu Ha, Chih-Yi Yang, Jer-Shen Maa, Edward-Yi Chang, Chang-Fu Dee

Alat Pencarian:

Normally-OFF GaN MIS-HEMT With F<sup>−</sup> Doped Gate Insulator Using Standard Ion Implantation oleh Chia-Hsun Wu, Ping-Cheng Han, Quang Ho Luc, Ching-Yi Hsu, Ting-En Hsieh, Huan-Chung Wang, Yen-Ku Lin, Po-Chun Chang, Yueh-Chin Lin, Edward Yi Chang