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    Research on ESD Protection of Ultra-High Voltage nLDMOS Devices by Super-Junction Engineering in the Drain-Side Drift Region

    Research on ESD Protection of Ultra-High Voltage nLDMOS Devices by Super-Junction Engineering in the Drain-Side Drift Region oleh Tien-Yu Lan, Shen-Li Chen, Hung-Wei Chen, Yi-Mu Lee

    Diterbitkan 2021-01-01
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