Hasil Pencarian - Yao-Jen Lee

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  1. 1
    Investigation of Boron Distribution at the SiO2/Si Interface of Monolayer Doping

    Investigation of Boron Distribution at the SiO2/Si Interface of Monolayer Doping oleh Shu-Han Hsu, Chia-Chen Wan, Ta-Chun Cho, Yao-Jen Lee

    Diterbitkan 2021-01-01
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  2. 2
    Enhancing the Performance of E-Mode AlGaN/GaN HEMTs With Recessed Gates Through Low-Damage Neutral Beam Etching and Post-Metallization Annealing

    Enhancing the Performance of E-Mode AlGaN/GaN HEMTs With Recessed Gates Through Low-Damage Neutral Beam Etching and Post-Metallization Annealing oleh Yi-Ho Chen, Daisuke Ohori, Muhammad Aslam, Yao-Jen Lee, Yiming Li, Seiji Samukawa

    Diterbitkan 2023-01-01
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  3. 3
    Temperature-Dependent Hydrogen Modulations of Ultra-Scaled a-IGZO Thin Film Transistor Under Gate Bias Stress

    Temperature-Dependent Hydrogen Modulations of Ultra-Scaled a-IGZO Thin Film Transistor Under Gate Bias Stress oleh Muhammad Aslam, Shu-Wei Chang, Min-Hui Chuang, Yi-Ho Chen, Yao-Jen Lee, Yiming Li

    Diterbitkan 2024-01-01
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  4. 4
    Mechanism of Threshold Voltage Instability in Double Gate α-IGZO Nanosheet TFT Under Bias and Temperature Stress

    Mechanism of Threshold Voltage Instability in Double Gate α-IGZO Nanosheet TFT Under Bias and Temperature Stress oleh Muhammad Aslam, Shu-Wei Chang, Yi-Ho Chen, Yao-Jen Lee, Yiming Li, Wen-Hsi Lee

    Diterbitkan 2024-01-01
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  5. 5
    Microwave Annealing for NiSiGe Schottky Junction on SiGe P-Channel

    Microwave Annealing for NiSiGe Schottky Junction on SiGe P-Channel oleh Yu-Hsien Lin, Yi-He Tsai, Chung-Chun Hsu, Guang-Li Luo, Yao-Jen Lee, Chao-Hsin Chien

    Diterbitkan 2015-11-01
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  6. 6
    DC-free Method to Evaluate Nanoscale Equivalent Oxide Thickness: Dark-Mode Scanning Capacitance Microscopy

    DC-free Method to Evaluate Nanoscale Equivalent Oxide Thickness: Dark-Mode Scanning Capacitance Microscopy oleh Mao-Nan Chang, Yi-Shan Wu, Chiao-Jung Lin, Yu-Hsun Hsueh, Chun-Jung Su, Yao-Jen Lee

    Diterbitkan 2024-05-01
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  7. 7
    High Electron Mobility Germanium FinFET Fabricated by Atomic Layer Defect-Free and Roughness-Free Etching

    High Electron Mobility Germanium FinFET Fabricated by Atomic Layer Defect-Free and Roughness-Free Etching oleh Daisuke Ohori, Takuya Fujii, Shuichi Noda, Wataru Mizubayashi, Kazuhiko Endo, Yao-Jen Lee, Jenn-Hwan Tarng, Yiming Li, Seiji Samukawa

    Diterbitkan 2021-01-01
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  8. 8
    Effects of Forming Gas Annealing and Channel Dimensions on the Electrical Characteristics of FeFETs and CMOS Inverter

    Effects of Forming Gas Annealing and Channel Dimensions on the Electrical Characteristics of FeFETs and CMOS Inverter oleh Po-Jung Sung, Chun-Jung Su, Shih-Hsuan Lo, Fu-Kuo Hsueh, Darsen D. Lu, Yao-Jen Lee, Tien-Sheng Chao

    Diterbitkan 2020-01-01
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  9. 9
    Germanium Twin-Transistor Nonvolatile Memory With FinFET Structure

    Germanium Twin-Transistor Nonvolatile Memory With FinFET Structure oleh Siao-Cheng Yan, Chong-Jhe Sun, Meng-Ju Tsai, Lun-Chun Chen, Mu-Shih Yeh, Chien-Chang Li, Yao-Jen Lee, Yung-Chun Wu

    Diterbitkan 2020-01-01
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  10. 10
    Ge GAA FETs and TMD FinFETs for the Applications Beyond Si—A Review

    Ge GAA FETs and TMD FinFETs for the Applications Beyond Si—A Review oleh Yao-Jen Lee, Guang-Li Luo, Fu-Ju Hou, Min-Cheng Chen, Chih-Chao Yang, Chang-Hong Shen, Wen-Fa Wu, Jia-Min Shieh, Wen-Kuan Yeh

    Diterbitkan 2016-01-01
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  11. 11
    Management of Phonon Transport in Lateral Direction for Gap-Controlled Si Nanopillar/SiGe Interlayer Composite Materials

    Management of Phonon Transport in Lateral Direction for Gap-Controlled Si Nanopillar/SiGe Interlayer Composite Materials oleh Daisuke Ohori, Min-Hui Chuang, Asahi Sato, Sou Takeuchi, Masayuki Murata, Atsushi Yamamoto, Ming-Yi Lee, Kazuhiko Endo, Yiming Li, Jenn-Hwan Tarng, Yao-Jen Lee, Seiji Samukawa

    Diterbitkan 2021-01-01
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  12. 12
    Random and Systematic Variation in Nanoscale Hf0.5Zr0.5O2 Ferroelectric FinFETs: Physical Origin and Neuromorphic Circuit Implications

    Random and Systematic Variation in Nanoscale Hf0.5Zr0.5O2 Ferroelectric FinFETs: Physical Origin and Neuromorphic Circuit Implications oleh Sourav De, Sourav De, Md. Aftab Baig, Bo-Han Qiu, Franz Müller, Hoang-Hiep Le, Maximilian Lederer, Thomas Kämpfe, Tarek Ali, Po-Jung Sung, Chun-Jung Su, Yao-Jen Lee, Darsen D. Lu

    Diterbitkan 2022-01-01
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  13. 13
    3-D Monolithic Stacking of Complementary-FET on CMOS for Next Generation Compute-In-Memory SRAM

    3-D Monolithic Stacking of Complementary-FET on CMOS for Next Generation Compute-In-Memory SRAM oleh Md. Aftab Baig, Cheng-Jui Yeh, Shu-Wei Chang, Bo-Han Qiu, Xiao-Shan Huang, Cheng-Hsien Tsai, Yu-Ming Chang, Po-Jung Sung, Chun-Jung Su, Ta-Chun Cho, Sourav De, Darsen Lu, Yao-Jen Lee, Wen-Hsi Lee, Wen-Fa Wu, Wen-Kuan Yeh

    Diterbitkan 2023-01-01
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