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    Suppressing the Initial Growth of Sidewall GaN by Modifying Micron-Sized Patterned Sapphire Substrate with H<sub>3</sub>PO<sub>4</sub>-Based Etchant

    Suppressing the Initial Growth of Sidewall GaN by Modifying Micron-Sized Patterned Sapphire Substrate with H<sub>3</sub>PO<sub>4</sub>-Based Etchant oleh Wen-Yang Hsu, Yuan-Chi Lian, Pei-Yu Wu, Wei-Min Yong, Jinn-Kong Sheu, Kun-Lin Lin, YewChung Sermon Wu

    Diterbitkan 2018-11-01
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