Hasil Pencarian - Toby Hopf

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    Single-Ion Implantation for the Development of Si-Based MOSFET Devices with Quantum Functionalities

    Single-Ion Implantation for the Development of Si-Based MOSFET Devices with Quantum Functionalities oleh Jeffrey C. McCallum, David N. Jamieson, Changyi Yang, Andrew D. Alves, Brett C. Johnson, Toby Hopf, Samuel C. Thompson, Jessica A. van Donkelaar

    Diterbitkan 2012-01-01
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