Hasil Pencarian - Sungkyu Kim

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  1. 1
    Accelerating 3D Convolutional Neural Network with Channel Bottleneck Module for EEG-Based Emotion Recognition

    Accelerating 3D Convolutional Neural Network with Channel Bottleneck Module for EEG-Based Emotion Recognition oleh Sungkyu Kim, Tae-Seong Kim, Won Hee Lee

    Diterbitkan 2022-09-01
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  2. 2
    Memristor‐Based Security Primitives Robust to Malicious Attacks for Highly Secure Neuromorphic Systems

    Memristor‐Based Security Primitives Robust to Malicious Attacks for Highly Secure Neuromorphic Systems oleh Jungyeop Oh, Sungkyu Kim, Junhwan Choi, Jun-Hwe Cha, Sung Gap Im, Byung Chul Jang, Sung-Yool Choi

    Diterbitkan 2022-11-01
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  3. 3
    Atomic layer-by-layer etching of graphene directly grown on SrTiO3 substrates for high-yield remote epitaxy and lift-off

    Atomic layer-by-layer etching of graphene directly grown on SrTiO3 substrates for high-yield remote epitaxy and lift-off oleh Ki Seok Kim, Ji Eun Kang, Peng Chen, Sungkyu Kim, Jongho Ji, Geun Young Yeom, Jeehwan Kim, Hyun S. Kum

    Diterbitkan 2022-04-01
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  4. 4
    Correction: Understanding the 2D-material and substrate interaction during epitaxial growth towards successful remote epitaxy: a review

    Correction: Understanding the 2D-material and substrate interaction during epitaxial growth towards successful remote epitaxy: a review oleh Jongho Ji, Hoe-Min Kwak, Jimyeong Yu, Sangwoo Park, Jeong-Hwan Park, Hyunsoo Kim, Seokgi Kim, Sungkyu Kim, Dong-Seon Lee, Hyun S. Kum

    Diterbitkan 2023-10-01
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  5. 5
    Understanding the 2D-material and substrate interaction during epitaxial growth towards successful remote epitaxy: a review

    Understanding the 2D-material and substrate interaction during epitaxial growth towards successful remote epitaxy: a review oleh Jongho Ji, Hoe-Min Kwak, Jimyeong Yu, Sangwoo Park, Jeong-Hwan Park, Hyunsoo Kim, Seokgi Kim, Sungkyu Kim, Dong-Seon Lee, Hyun S. Kum

    Diterbitkan 2023-04-01
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  6. 6
    Heterogeneous integration of high-k complex-oxide gate dielectrics on wide band-gap high-electron-mobility transistors

    Heterogeneous integration of high-k complex-oxide gate dielectrics on wide band-gap high-electron-mobility transistors oleh Jongho Ji, Jeong Yong Yang, Sangho Lee, Seokgi Kim, Min Jae Yeom, Gyuhyung Lee, Heechang Shin, Sang-Hoon Bae, Jong-Hyun Ahn, Sungkyu Kim, Jeehwan Kim, Geonwook Yoo, Hyun S. Kum

    Diterbitkan 2024-01-01
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  7. 7
    Ultrathin All‐Solid‐State MoS2‐Based Electrolyte Gated Synaptic Transistor with Tunable Organic–Inorganic Hybrid Film

    Ultrathin All‐Solid‐State MoS2‐Based Electrolyte Gated Synaptic Transistor with Tunable Organic–Inorganic Hybrid Film oleh Jungyeop Oh, Seohak Park, Sang Hun Lee, Sungkyu Kim, Hyeonji Lee, Changhyeon Lee, Woonggi Hong, Jun‐Hwe Cha, Mingu Kang, Jun Hyup Jin, Sung Gap Im, Min Ju Kim, Sung‐Yool Choi

    Diterbitkan 2024-06-01
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