Hasil Pencarian - Shin Mou

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  1. 1
    Electrical properties of n-type GaSb substrates and p-type GaSb buffer layers for InAs/InGaSb superlattice infrared detectors

    Electrical properties of n-type GaSb substrates and p-type GaSb buffer layers for InAs/InGaSb superlattice infrared detectors oleh W. C. Mitchel, S. Elhamri, H. J. Haugan, R. Berney, Shin Mou, G. J. Brown

    Diterbitkan 2015-09-01
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  2. 2
    γ-phase inclusions as common structural defects in alloyed β-(AlxGa1−x)2O3 and doped β-Ga2O3 films

    γ-phase inclusions as common structural defects in alloyed β-(AlxGa1−x)2O3 and doped β-Ga2O3 films oleh Celesta S. Chang, Nicholas Tanen, Vladimir Protasenko, Thaddeus J. Asel, Shin Mou, Huili Grace Xing, Debdeep Jena, David A. Muller

    Diterbitkan 2021-05-01
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  3. 3
    Epitaxial growth of α-(AlxGa1−x)2O3 by suboxide molecular-beam epitaxy at 1 µm/h

    Epitaxial growth of α-(AlxGa1−x)2O3 by suboxide molecular-beam epitaxy at 1 µm/h oleh Jacob Steele, Kathy Azizie, Naomi Pieczulewski, Yunjo Kim, Shin Mou, Thaddeus J. Asel, Adam T. Neal, Debdeep Jena, Huili G. Xing, David A. Muller, Takeyoshi Onuma, Darrell G. Schlom

    Diterbitkan 2024-04-01
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  4. 4
    Improvement of p-Type AlGaN Conductivity with an Alternating Mg-Doped/Un-Doped AlGaN Layer Structure

    Improvement of p-Type AlGaN Conductivity with an Alternating Mg-Doped/Un-Doped AlGaN Layer Structure oleh Chi-Chung Chen, Yu-Ren Lin, Yu-Wei Lin, Yu-Cheng Su, Chung-Chi Chen, Ting-Chun Huang, Ping-Hsiu Wu, C. C. Yang, Shin Mou, Kent L. Averett

    Diterbitkan 2021-07-01
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  5. 5
    Erratum: “Adsorption-controlled growth of Ga2O3 by suboxide molecular-beam epitaxy,” [APL. Mater. 9, 031101 (2021)]

    Erratum: “Adsorption-controlled growth of Ga2O3 by suboxide molecular-beam epitaxy,” [APL. Mater. 9, 031101 (2021)] oleh Patrick Vogt, Felix V. E. Hensling, Kathy Azizie, Celesta S. Chang, David Turner, Jisung Park, Jonathan P. McCandless, Hanjong Paik, Brandon J. Bocklund, Georg Hoffmann, Oliver Bierwagen, Debdeep Jena, Huili G. Xing, Shin Mou, David A. Muller, Shun-Li Shang, Zi-Kui Liu, Darrell G. Schlom

    Diterbitkan 2021-04-01
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  6. 6
    Adsorption-controlled growth of Ga2O3 by suboxide molecular-beam epitaxy

    Adsorption-controlled growth of Ga2O3 by suboxide molecular-beam epitaxy oleh Patrick Vogt, Felix V. E. Hensling, Kathy Azizie, Celesta S. Chang, David Turner, Jisung Park, Jonathan P. McCandless, Hanjong Paik, Brandon J. Bocklund, Georg Hoffman, Oliver Bierwagen, Debdeep Jena, Huili G. Xing, Shin Mou, David A. Muller, Shun-Li Shang, Zi-Kui Liu, Darrell G. Schlom

    Diterbitkan 2021-03-01
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  7. 7
    Silicon-doped β-Ga2O3 films grown at 1 µm/h by suboxide molecular-beam epitaxy

    Silicon-doped β-Ga2O3 films grown at 1 µm/h by suboxide molecular-beam epitaxy oleh Kathy Azizie, Felix V. E. Hensling, Cameron A. Gorsak, Yunjo Kim, Naomi A. Pieczulewski, Daniel M. Dryden, M. K. Indika Senevirathna, Selena Coye, Shun-Li Shang, Jacob Steele, Patrick Vogt, Nicholas A. Parker, Yorick A. Birkhölzer, Jonathan P. McCandless, Debdeep Jena, Huili G. Xing, Zi-Kui Liu, Michael D. Williams, Andrew J. Green, Kelson Chabak, David A. Muller, Adam T. Neal, Shin Mou, Michael O. Thompson, Hari P. Nair, Darrell G. Schlom

    Diterbitkan 2023-04-01
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  8. 8
    β-Gallium oxide power electronics

    β-Gallium oxide power electronics oleh Andrew J. Green, James Speck, Grace Xing, Peter Moens, Fredrik Allerstam, Krister Gumaelius, Thomas Neyer, Andrea Arias-Purdue, Vivek Mehrotra, Akito Kuramata, Kohei Sasaki, Shinya Watanabe, Kimiyoshi Koshi, John Blevins, Oliver Bierwagen, Sriram Krishnamoorthy, Kevin Leedy, Aaron R. Arehart, Adam T. Neal, Shin Mou, Steven A. Ringel, Avinash Kumar, Ankit Sharma, Krishnendu Ghosh, Uttam Singisetti, Wenshen Li, Kelson Chabak, Kyle Liddy, Ahmad Islam, Siddharth Rajan, Samuel Graham, Sukwon Choi, Zhe Cheng, Masataka Higashiwaki

    Diterbitkan 2022-02-01
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