Hasil Pencarian - Shi‐Jin Ding

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  1. 1
    Electrically programmable-erasable In-Ga-Zn-O thin-film transistor memory with atomic-layer-deposited Al2O3/Pt nanocrystals/Al2O3 gate stack

    Electrically programmable-erasable In-Ga-Zn-O thin-film transistor memory with atomic-layer-deposited Al2O3/Pt nanocrystals/Al2O3 gate stack oleh Shi-Bing Qian, Wen-Peng Zhang, Wen-Jun Liu, Shi-Jin Ding

    Diterbitkan 2015-12-01
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  2. 2
    High-Performance a-InGaZnO Thin-Film Transistors with Extremely Low Thermal Budget by Using a Hydrogen-Rich Al2O3 Dielectric

    High-Performance a-InGaZnO Thin-Film Transistors with Extremely Low Thermal Budget by Using a Hydrogen-Rich Al2O3 Dielectric oleh Yan Shao, Xiaohan Wu, Mei-Na Zhang, Wen-Jun Liu, Shi-Jin Ding

    Diterbitkan 2019-04-01
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  3. 3
    High performance ultraviolet photodetectors with atomic-layer-deposited ZnO films via low-temperature post-annealing in air

    High performance ultraviolet photodetectors with atomic-layer-deposited ZnO films via low-temperature post-annealing in air oleh Jian Gao, Wen-Jun Liu, Shi-Jin Ding, Hong-Liang Lu, David Wei Zhang

    Diterbitkan 2018-01-01
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  4. 4
    Investigation of energy band at atomic layer deposited AZO/β-Ga2O3 ( 2¯01 $$ \overline{2}01 $$) heterojunctions

    Investigation of energy band at atomic layer deposited AZO/β-Ga2O3 ( 2¯01 $$ \overline{2}01 $$) heterojunctions oleh Shun-Ming Sun, Wen-Jun Liu, Dmitriy Anatolyevich Golosov, Chen-Jie Gu, Shi-Jin Ding

    Diterbitkan 2019-08-01
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  5. 5
    Mobility and Stability Enhancement of Amorphous In-Ga-Zn-O TFTs With Atomic Layer Deposited Al<sub>2</sub>O<sub>3</sub>/SiO<sub>2</sub> Stacked Insulators

    Mobility and Stability Enhancement of Amorphous In-Ga-Zn-O TFTs With Atomic Layer Deposited Al<sub>2</sub>O<sub>3</sub>/SiO<sub>2</sub> Stacked Insulators oleh Li-Li Zheng, Shi-Bing Qian, You-Hang Wang, Wen-Jun Liu, Shi-Jin Ding

    Diterbitkan 2016-01-01
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  6. 6
    Dielectric Enhancement of Atomic Layer-Deposited Al2O3/ZrO2/Al2O3 MIM Capacitors by Microwave Annealing

    Dielectric Enhancement of Atomic Layer-Deposited Al2O3/ZrO2/Al2O3 MIM Capacitors by Microwave Annealing oleh Bao Zhu, Xiaohan Wu, Wen-Jun Liu, Shi-Jin Ding, David Wei Zhang, Zhongyong Fan

    Diterbitkan 2019-02-01
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  7. 7
    Plasma-Enhanced Atomic Layer Deposition of Cobalt Films Using Co(EtCp)2 as a Metal Precursor

    Plasma-Enhanced Atomic Layer Deposition of Cobalt Films Using Co(EtCp)2 as a Metal Precursor oleh Bao Zhu, Zi-Jun Ding, Xiaohan Wu, Wen-Jun Liu, David Wei Zhang, Shi-Jin Ding

    Diterbitkan 2019-03-01
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  8. 8
    High Performance On-Chip Energy Storage Capacitors with Plasma-Enhanced Atomic Layer-Deposited Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub>/Al-Doped Hf<sub>0.25</sub>Zr<sub>0.75</sub>O<sub>2</sub> Nanofilms as Dielectrics

    High Performance On-Chip Energy Storage Capacitors with Plasma-Enhanced Atomic Layer-Deposited Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub>/Al-Doped Hf<sub>0.25</sub>Zr<sub>0.75</... oleh Yuli He, Guang Zheng, Bao Zhu, Xiaohan Wu, Wen-Jun Liu, David Wei Zhang, Shi-Jin Ding

    Diterbitkan 2023-05-01
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  9. 9
    Atomic-Layer-Deposition of Indium Oxide Nano-films for Thin-Film Transistors

    Atomic-Layer-Deposition of Indium Oxide Nano-films for Thin-Film Transistors oleh Qian Ma, He-Mei Zheng, Yan Shao, Bao Zhu, Wen-Jun Liu, Shi-Jin Ding, David Wei Zhang

    Diterbitkan 2018-01-01
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  10. 10
    Growth, physical and electrical characterization of nickel oxide thin films prepared by plasma-enhanced atomic layer deposition using nickelocene and oxygen precursors

    Growth, physical and electrical characterization of nickel oxide thin films prepared by plasma-enhanced atomic layer deposition using nickelocene and oxygen precursors oleh Lin-Yan Xie, Dong-Qi Xiao, Jun-Xiang Pei, Jingyong Huo, Xiaohan Wu, Wen-Jun Liu, Shi-Jin Ding

    Diterbitkan 2020-01-01
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  11. 11
    Hexagonal boron nitride intercalated multi-layer graphene: a possible ultimate solution to ultra-scaled interconnect technology

    Hexagonal boron nitride intercalated multi-layer graphene: a possible ultimate solution to ultra-scaled interconnect technology oleh Yong-Jun Li, Qing-Qing Sun, Lin Chen, Peng Zhou, Peng-Fei Wang, Shi-Jin Ding, David Wei Zhang

    Diterbitkan 2012-03-01
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  12. 12
    Voltage-Polarity Dependent Programming Behaviors of Amorphous In–Ga–Zn–O Thin-Film Transistor Memory with an Atomic-Layer-Deposited ZnO Charge Trapping Layer

    Voltage-Polarity Dependent Programming Behaviors of Amorphous In–Ga–Zn–O Thin-Film Transistor Memory with an Atomic-Layer-Deposited ZnO Charge Trapping Layer oleh Dan-Dan Liu, Wen-Jun Liu, Jun-Xiang Pei, Lin-Yan Xie, Jingyong Huo, Xiaohan Wu, Shi-Jin Ding

    Diterbitkan 2019-12-01
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  13. 13
    Atomic Layer-Deposited HfAlOx-Based RRAM with Low Operating Voltage for Computing In-Memory Applications

    Atomic Layer-Deposited HfAlOx-Based RRAM with Low Operating Voltage for Computing In-Memory Applications oleh Zhen-Yu He, Tian-Yu Wang, Lin Chen, Hao Zhu, Qing-Qing Sun, Shi-Jin Ding, David Wei Zhang

    Diterbitkan 2019-02-01
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  14. 14
    Investigation of Energy Band at Atomic-Layer-Deposited ZnO/β-Ga2O3 ( 2¯01 $$ \overline{2}01 $$) Heterojunctions

    Investigation of Energy Band at Atomic-Layer-Deposited ZnO/β-Ga2O3 ( 2¯01 $$ \overline{2}01 $$) Heterojunctions oleh Shun-Ming Sun, Wen-Jun Liu, Yi-Fan Xiao, Ya-Wei Huan, Hao Liu, Shi-Jin Ding, David Wei Zhang

    Diterbitkan 2018-12-01
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  15. 15
    Investigation of Nitridation on the Band Alignment at MoS2/HfO2 Interfaces

    Investigation of Nitridation on the Band Alignment at MoS2/HfO2 Interfaces oleh Ya-Wei Huan, Wen-Jun Liu, Xiao-Bing Tang, Xiao-Yong Xue, Xiao-Lei Wang, Qing-Qing Sun, Shi-Jin Ding

    Diterbitkan 2019-05-01
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  16. 16
    Flexible 3D memristor array for binary storage and multi‐states neuromorphic computing applications

    Flexible 3D memristor array for binary storage and multi‐states neuromorphic computing applications oleh Tian‐Yu Wang, Jia‐Lin Meng, Lin Chen, Hao Zhu, Qing‐Qing Sun, Shi‐Jin Ding, Wen‐Zhong Bao, David Wei Zhang

    Diterbitkan 2021-02-01
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  17. 17
    Atomic Layer Deposited Hf0.5Zr0.5O2-based Flexible Memristor with Short/Long-Term Synaptic Plasticity

    Atomic Layer Deposited Hf0.5Zr0.5O2-based Flexible Memristor with Short/Long-Term Synaptic Plasticity oleh Tian-Yu Wang, Jia-Lin Meng, Zhen-Yu He, Lin Chen, Hao Zhu, Qing-Qing Sun, Shi-Jin Ding, David Wei Zhang

    Diterbitkan 2019-03-01
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  18. 18
    Ultralow Power Wearable Heterosynapse with Photoelectric Synergistic Modulation

    Ultralow Power Wearable Heterosynapse with Photoelectric Synergistic Modulation oleh Tian‐Yu Wang, Jia‐Lin Meng, Zhen‐Yu He, Lin Chen, Hao Zhu, Qing‐Qing Sun, Shi‐Jin Ding, Peng Zhou, David Wei Zhang

    Diterbitkan 2020-04-01
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  19. 19
    Recent Advances in β-Ga2O3–Metal Contacts

    Recent Advances in β-Ga2O3–Metal Contacts oleh Ya-Wei Huan, Shun-Ming Sun, Chen-Jie Gu, Wen-Jun Liu, Shi-Jin Ding, Hong-Yu Yu, Chang-Tai Xia, David Wei Zhang

    Diterbitkan 2018-08-01
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  20. 20
    In Situ Analysis of Oxygen Vacancies and Band Alignment in HfO2/TiN Structure for CMOS Applications

    In Situ Analysis of Oxygen Vacancies and Band Alignment in HfO2/TiN Structure for CMOS Applications oleh Da-Peng Xu, Lin-Jie Yu, Xu-Dong Chen, Lin Chen, Qing-Qing Sun, Hao Zhu, Hong-Liang Lu, Peng Zhou, Shi-Jin Ding, David Wei Zhang

    Diterbitkan 2017-04-01
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