Hasil Pencarian - Shen-Li Chen

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  1. 1
    The I-V Characteristic Prediction of BCD LV pMOSFET Devices Based on an ANFIS-Based Methodology

    The I-V Characteristic Prediction of BCD LV pMOSFET Devices Based on an ANFIS-Based Methodology oleh Shen-Li Chen

    Diterbitkan 2015-01-01
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  2. 2
    Sensing and Reliability Improvement of Electrostatic-Discharge Transient by Discrete Engineering for High-Voltage 60-V n-Channel Lateral-Diffused MOSFETs with Embedded Silicon-Controlled Rectifiers

    Sensing and Reliability Improvement of Electrostatic-Discharge Transient by Discrete Engineering for High-Voltage 60-V n-Channel Lateral-Diffused MOSFETs with Embedded Silicon-Cont... oleh Shen-Li Chen, Yi-Cih Wu

    Diterbitkan 2018-10-01
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  3. 3
    Enhance the ESD Ability of UHV 300-V Circular LDMOS Components by Embedded SCRs and the Robustness P-Body Well

    Enhance the ESD Ability of UHV 300-V Circular LDMOS Components by Embedded SCRs and the Robustness P-Body Well oleh Po-Lin Lin, Shen-Li Chen, Sheng-Kai Fan

    Diterbitkan 2021-01-01
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  4. 4
    Research on ESD Protection of Ultra-High Voltage nLDMOS Devices by Super-Junction Engineering in the Drain-Side Drift Region

    Research on ESD Protection of Ultra-High Voltage nLDMOS Devices by Super-Junction Engineering in the Drain-Side Drift Region oleh Tien-Yu Lan, Shen-Li Chen, Hung-Wei Chen, Yi-Mu Lee

    Diterbitkan 2021-01-01
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  5. 5
    ESD Improvements on Power N-Channel LDMOS Devices by the Composite Structure of Super Junctions Integrated With SCRs in the Drain Side

    ESD Improvements on Power N-Channel LDMOS Devices by the Composite Structure of Super Junctions Integrated With SCRs in the Drain Side oleh Hung-Wei Chen, Shen-Li Chen, Yu-Ting Huang, Hsun-Hsiang Chen

    Diterbitkan 2020-01-01
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