Hasil Pencarian - S. Decoutère

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  1. 1
    Surface-Potential-Based Compact Modeling of p-GaN Gate HEMTs

    Surface-Potential-Based Compact Modeling of p-GaN Gate HEMTs oleh Jie Wang, Zhanfei Chen, Shuzhen You, Benoit Bakeroot, Jun Liu, Stefaan Decoutere

    Diterbitkan 2021-02-01
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  2. 2
    Symposium "Geographische Nachwuchsforscher in der Schweiz"

    Symposium "Geographische Nachwuchsforscher in der Schweiz" oleh W. Leimgruber, D. Wachter, F. Furger, J.-M. Fallot, M. Trüeb, S. Decoutère

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  3. 3
    Use of Bilayer Gate Insulator in GaN-on-Si Vertical Trench MOSFETs: Impact on Performance and Reliability

    Use of Bilayer Gate Insulator in GaN-on-Si Vertical Trench MOSFETs: Impact on Performance and Reliability oleh Kalparupa Mukherjee, Carlo De Santi, Matteo Borga, Shuzhen You, Karen Geens, Benoit Bakeroot, Stefaan Decoutere, Gaudenzio Meneghesso, Enrico Zanoni, Matteo Meneghini

    Diterbitkan 2020-10-01
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  4. 4
    Understanding the Leakage Mechanisms and Breakdown Limits of Vertical GaN-on-Si p<sup>+</sup>n<sup>−</sup>n Diodes: The Road to Reliable Vertical MOSFETs

    Understanding the Leakage Mechanisms and Breakdown Limits of Vertical GaN-on-Si p<sup>+</sup>n<sup>−</sup>n Diodes: The Road to Reliable Vertical MOSFETs oleh Kalparupa Mukherjee, Carlo De Santi, Matteo Buffolo, Matteo Borga, Shuzhen You, Karen Geens, Benoit Bakeroot, Stefaan Decoutere, Andrea Gerosa, Gaudenzio Meneghesso, Enrico Zanoni, Matteo Meneghini

    Diterbitkan 2021-04-01
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  5. 5
    Development and analysis of thick GaN drift layers on 200 mm CTE-matched substrate for vertical device processing

    Development and analysis of thick GaN drift layers on 200 mm CTE-matched substrate for vertical device processing oleh Walter Gonçalez Filho, Matteo Borga, Karen Geens, Deepthi Cingu, Urmimala Chatterjee, Sourish Banerjee, Anurag Vohra, Han Han, Albert Minj, Herwig Hahn, Matthias Marx, Dirk Fahle, Benoit Bakeroot, Stefaan Decoutere

    Diterbitkan 2023-09-01
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  6. 6
    Challenges and Perspectives for Vertical GaN-on-Si Trench MOS Reliability: From Leakage Current Analysis to Gate Stack Optimization

    Challenges and Perspectives for Vertical GaN-on-Si Trench MOS Reliability: From Leakage Current Analysis to Gate Stack Optimization oleh Kalparupa Mukherjee, Carlo De Santi, Matteo Borga, Karen Geens, Shuzhen You, Benoit Bakeroot, Stefaan Decoutere, Patrick Diehle, Susanne Hübner, Frank Altmann, Matteo Buffolo, Gaudenzio Meneghesso, Enrico Zanoni, Matteo Meneghini

    Diterbitkan 2021-04-01
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  7. 7
    A new approach to improving healthcare personnel influenza immunization programs: a randomized controlled trial.

    A new approach to improving healthcare personnel influenza immunization programs: a randomized controlled trial. oleh Larry W Chambers, Lois Crowe, Po-Po Lam, Donna MacDougall, Shelly McNeil, Virginia Roth, Kathryn Suh, Catherine Dalzell, Donna Baker, Hilary Ramsay, Sarah DeCoutere, Heather L Hall, Anne E McCarthy

    Diterbitkan 2015-01-01
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