Hasil Pencarian - Rongxi Xuan

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  1. 1
    Finite Element Stress Model of Direct Band Gap Ge Implementation Method Compatible with Si Process

    Finite Element Stress Model of Direct Band Gap Ge Implementation Method Compatible with Si Process oleh Xiaohuan Xue, Jianjun Song, Rongxi Xuan

    Diterbitkan 2019-01-01
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  2. 2
    High-quality GeSn Layer with Sn Composition up to 7% Grown by Low-temperature Magnetron Sputtering for Optoelectronic Application

    High-quality GeSn Layer with Sn Composition up to 7% Grown by Low-temperature Magnetron Sputtering for Optoelectronic Application oleh Jiayin Yang, Huiyong Hu, Yuanhao Miao, Linpeng Dong, Bin Wang, Wei Wang, Rongxi Xuan

    Diterbitkan 2019-08-01
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