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    Ultra-low resistance n+GaN contacts for GaN HEMT applications using MOCVD selective area epitaxy in N2 carrier gas

    Ultra-low resistance n+GaN contacts for GaN HEMT applications using MOCVD selective area epitaxy in N2 carrier gas oleh Jizhong Li, Paul Brabant, Dan Hannan, Tim Vasen, Shamima Afroz, Ken Nagamatsu, Josei Chang, Patrick Shea, David Lawson, Rob Howell

    Diterbitkan 2022-03-01
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