Hasil Pencarian - Patrick Vogt

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  1. 1
    Silicene, germanene and other group IV 2D materials

    Silicene, germanene and other group IV 2D materials oleh Patrick Vogt

    Diterbitkan 2018-10-01
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  2. 2
    Kinetics versus thermodynamics of the metal incorporation in molecular beam epitaxy of (InxGa1−x)2O3

    Kinetics versus thermodynamics of the metal incorporation in molecular beam epitaxy of (InxGa1−x)2O3 oleh Patrick Vogt, Oliver Bierwagen

    Diterbitkan 2016-08-01
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  3. 3
    Certificate-of-need laws and substance use treatment

    Certificate-of-need laws and substance use treatment oleh James Bailey, Thanh Lu, Patrick Vogt

    Diterbitkan 2022-05-01
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  4. 4
    Optimization of Electrochemically Deposited Highly Doped ZnO Bilayers on Ga-Rich Chalcopyrite Selenide for Cost-Effective Photovoltaic Device Technology

    Optimization of Electrochemically Deposited Highly Doped ZnO Bilayers on Ga-Rich Chalcopyrite Selenide for Cost-Effective Photovoltaic Device Technology oleh Dimitra N. Papadimitriou, Georgios Roupakas, Georgios G. Roumeliotis, Patrick Vogt, Tristan Köhler

    Diterbitkan 2016-11-01
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  5. 5
    Comprehensive Raman study of epitaxial silicene-related phases on Ag(111)

    Comprehensive Raman study of epitaxial silicene-related phases on Ag(111) oleh Dmytro Solonenko, Ovidiu D. Gordan, Guy Le Lay, Dietrich R. T. Zahn, Patrick Vogt

    Diterbitkan 2017-07-01
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  6. 6
    Indium: A surfactant for the growth of ɛ/κ-Ga2O3 by molecular beam epitaxy

    Indium: A surfactant for the growth of ɛ/κ-Ga2O3 by molecular beam epitaxy oleh Alexander Karg, Alexander Hinz, Stephan Figge, Marco Schowalter, Patrick Vogt, Andreas Rosenauer, Martin Eickhoff

    Diterbitkan 2023-09-01
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  7. 7
    Growth, catalysis, and faceting of α-Ga2O3 and α-(InxGa1−x)2O3 on m-plane α-Al2O3 by molecular beam epitaxy

    Growth, catalysis, and faceting of α-Ga2O3 and α-(InxGa1−x)2O3 on m-plane α-Al2O3 by molecular beam epitaxy oleh Martin S. Williams, Manuel Alonso-Orts, Marco Schowalter, Alexander Karg, Sushma Raghuvansy, Jon P. McCandless, Debdeep Jena, Andreas Rosenauer, Martin Eickhoff, Patrick Vogt

    Diterbitkan 2024-01-01
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  8. 8
    The fate of the 2√3 × 2√3R(30°) silicene phase on Ag(111)

    The fate of the 2√3 × 2√3R(30°) silicene phase on Ag(111) oleh Zhi-Long Liu, Mei-Xiao Wang, Canhua Liu, Jin-Feng Jia, Patrick Vogt, Claudio Quaresima, Carlo Ottaviani, Bruno Olivieri, Paola De Padova, Guy Le Lay

    Diterbitkan 2014-09-01
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  9. 9
    Various atomic structures of monolayer silicene fabricated on Ag(111)

    Various atomic structures of monolayer silicene fabricated on Ag(111) oleh Zhi-Long Liu, Mei-Xiao Wang, Jin-Peng Xu, Jian-Feng Ge, Guy Le Lay, Patrick Vogt, Dong Qian, Chun-Lei Gao, Canhua Liu, Jin-Feng Jia

    Diterbitkan 2014-01-01
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  10. 10
    Erratum: “Growth of β-Ga2O3 and ε/κ-Ga2O3 on AlN(0001) by molecular-beam epitaxy” [APL Mater. 11, 111113 (2023)]

    Erratum: “Growth of β-Ga2O3 and ε/κ-Ga2O3 on AlN(0001) by molecular-beam epitaxy” [APL Mater. 11, 111113 (2023)] oleh Sushma Raghuvansy, Jon P. McCandless, Marco Schowalter, Alexander Karg, Manuel Alonso-Orts, Martin S. Williams, Christian Tessarek, Stephan Figge, Kazuki Nomoto, Huili Grace Xing, Darrell G. Schlom, Andreas Rosenauer, Debdeep Jena, Martin Eickhoff, Patrick Vogt

    Diterbitkan 2024-01-01
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  11. 11
    Growth of β-Ga2O3 and ϵ/κ-Ga2O3 on AlN(0001) by molecular-beam epitaxy

    Growth of β-Ga2O3 and ϵ/κ-Ga2O3 on AlN(0001) by molecular-beam epitaxy oleh Sushma Raghuvansy, Jon P. McCandless, Marco Schowalter, Alexander Karg, Manuel Alonso-Orts, Martin S. Williams, Christian Tessarek, Stephan Figge, Kazuki Nomoto, Huili Grace Xing, Darrell G. Schlom, Andreas Rosenauer, Debdeep Jena, Martin Eickhoff, Patrick Vogt

    Diterbitkan 2023-11-01
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  12. 12
    Adsorption-controlled growth of homoepitaxial c-plane sapphire films

    Adsorption-controlled growth of homoepitaxial c-plane sapphire films oleh Lena N. Majer, Tolga Acartürk, Peter A. van Aken, Wolfgang Braun, Luca Camuti, Johan Eckl-Haese, Jochen Mannhart, Takeyoshi Onuma, Ksenia S. Rabinovich, Darrell G. Schlom, Sander Smink, Ulrich Starke, Jacob Steele, Patrick Vogt, Hongguang Wang, Felix V. E. Hensling

    Diterbitkan 2024-09-01
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  13. 13
    Erratum: “Adsorption-controlled growth of Ga2O3 by suboxide molecular-beam epitaxy,” [APL. Mater. 9, 031101 (2021)]

    Erratum: “Adsorption-controlled growth of Ga2O3 by suboxide molecular-beam epitaxy,” [APL. Mater. 9, 031101 (2021)] oleh Patrick Vogt, Felix V. E. Hensling, Kathy Azizie, Celesta S. Chang, David Turner, Jisung Park, Jonathan P. McCandless, Hanjong Paik, Brandon J. Bocklund, Georg Hoffmann, Oliver Bierwagen, Debdeep Jena, Huili G. Xing, Shin Mou, David A. Muller, Shun-Li Shang, Zi-Kui Liu, Darrell G. Schlom

    Diterbitkan 2021-04-01
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  14. 14
    Adsorption-controlled growth of Ga2O3 by suboxide molecular-beam epitaxy

    Adsorption-controlled growth of Ga2O3 by suboxide molecular-beam epitaxy oleh Patrick Vogt, Felix V. E. Hensling, Kathy Azizie, Celesta S. Chang, David Turner, Jisung Park, Jonathan P. McCandless, Hanjong Paik, Brandon J. Bocklund, Georg Hoffman, Oliver Bierwagen, Debdeep Jena, Huili G. Xing, Shin Mou, David A. Muller, Shun-Li Shang, Zi-Kui Liu, Darrell G. Schlom

    Diterbitkan 2021-03-01
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  15. 15
    Silicon-doped β-Ga2O3 films grown at 1 µm/h by suboxide molecular-beam epitaxy

    Silicon-doped β-Ga2O3 films grown at 1 µm/h by suboxide molecular-beam epitaxy oleh Kathy Azizie, Felix V. E. Hensling, Cameron A. Gorsak, Yunjo Kim, Naomi A. Pieczulewski, Daniel M. Dryden, M. K. Indika Senevirathna, Selena Coye, Shun-Li Shang, Jacob Steele, Patrick Vogt, Nicholas A. Parker, Yorick A. Birkhölzer, Jonathan P. McCandless, Debdeep Jena, Huili G. Xing, Zi-Kui Liu, Michael D. Williams, Andrew J. Green, Kelson Chabak, David A. Muller, Adam T. Neal, Shin Mou, Michael O. Thompson, Hari P. Nair, Darrell G. Schlom

    Diterbitkan 2023-04-01
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