Hasil Pencarian - N. Collaert

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  1. 1
    Advanced CMOS device technologies for 45 nm node and below

    Advanced CMOS device technologies for 45 nm node and below oleh A. Veloso, T. Hoffmann, A. Lauwers, H. Yu, S. Severi, E. Augendre, S. Kubicek, P. Verheyen, N. Collaert, P. Absil, M. Jurczak and S. Biesemans

    Diterbitkan 2007-01-01
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  2. 2
    The Impact of Width Downscaling on the High-Frequency Characteristics of InGaAs Nanowire FETs

    The Impact of Width Downscaling on the High-Frequency Characteristics of InGaAs Nanowire FETs oleh P. Huang, Q. H. Luc, A. Sibaja-Hernandez, H. L. Ko, J. Y. Wu, N. A. Tran, N. Collaert, E. Y. Chang

    Diterbitkan 2022-01-01
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  3. 3
    High Mobility In<sub>0.53</sub>Ga<sub>0.47</sub>As MOSFETs With Steep Sub-Threshold Slope Achieved by Remote Reduction of Native III-V Oxides With Metal Electrodes

    High Mobility In<sub>0.53</sub>Ga<sub>0.47</sub>As MOSFETs With Steep Sub-Threshold Slope Achieved by Remote Reduction of Native III-V Oxides With Metal Electrodes oleh S. Yoshida, H. C. Lin, A. Vais, A. Alian, J. Franco, S. El Kazzi, Y. Mols, Y. Miyanami, M. Nakazawa, N. Collaert, H. Watanabe, A. Thean

    Diterbitkan 2017-01-01
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  4. 4
    Investigation of device transport characteristics enhancement of In0.53Ga0.47As MOSFET through in situ NH3/N2 remote-plasma treatment

    Investigation of device transport characteristics enhancement of In0.53Ga0.47As MOSFET through in situ NH3/N2 remote-plasma treatment oleh P. Huang, Q. H. Luc, A. Sibaja-Hernandez, C. W. Hsu, J. Y. Wu, H. L. Ko, N. A. Tran, N. Collaert, E. Y. Chang

    Diterbitkan 2021-01-01
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