Hasil Pencarian - Ming-Yang Cha

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    MoS2-based ferroelectric field-effect transistor with atomic layer deposited Hf0.5Zr0.5O2 films toward memory applications

    MoS2-based ferroelectric field-effect transistor with atomic layer deposited Hf0.5Zr0.5O2 films toward memory applications oleh Ming-Yang Cha, Hao Liu, Tian-Yu Wang, Lin Chen, Hao Zhu, Li Ji, Qing-Qing Sun, David Wei Zhang

    Diterbitkan 2020-06-01
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