Hasil Pencarian - Manuel Alonso-Orts

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  1. 1
    Growth, catalysis, and faceting of α-Ga2O3 and α-(InxGa1−x)2O3 on m-plane α-Al2O3 by molecular beam epitaxy

    Growth, catalysis, and faceting of α-Ga2O3 and α-(InxGa1−x)2O3 on m-plane α-Al2O3 by molecular beam epitaxy oleh Martin S. Williams, Manuel Alonso-Orts, Marco Schowalter, Alexander Karg, Sushma Raghuvansy, Jon P. McCandless, Debdeep Jena, Andreas Rosenauer, Martin Eickhoff, Patrick Vogt

    Diterbitkan 2024-01-01
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  2. 2
    Temperature-Dependent Anisotropic Refractive Index in β-Ga<sub>2</sub>O<sub>3</sub>: Application in Interferometric Thermometers

    Temperature-Dependent Anisotropic Refractive Index in β-Ga<sub>2</sub>O<sub>3</sub>: Application in Interferometric Thermometers oleh Daniel Carrasco, Eva Nieto-Pinero, Manuel Alonso-Orts, Rosalía Serna, Jose M. San Juan, María L. Nó, Jani Jesenovec, John S. McCloy, Emilio Nogales, Bianchi Méndez

    Diterbitkan 2023-03-01
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  3. 3
    Erratum: “Growth of β-Ga2O3 and ε/κ-Ga2O3 on AlN(0001) by molecular-beam epitaxy” [APL Mater. 11, 111113 (2023)]

    Erratum: “Growth of β-Ga2O3 and ε/κ-Ga2O3 on AlN(0001) by molecular-beam epitaxy” [APL Mater. 11, 111113 (2023)] oleh Sushma Raghuvansy, Jon P. McCandless, Marco Schowalter, Alexander Karg, Manuel Alonso-Orts, Martin S. Williams, Christian Tessarek, Stephan Figge, Kazuki Nomoto, Huili Grace Xing, Darrell G. Schlom, Andreas Rosenauer, Debdeep Jena, Martin Eickhoff, Patrick Vogt

    Diterbitkan 2024-01-01
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  4. 4
    Growth of β-Ga2O3 and ϵ/κ-Ga2O3 on AlN(0001) by molecular-beam epitaxy

    Growth of β-Ga2O3 and ϵ/κ-Ga2O3 on AlN(0001) by molecular-beam epitaxy oleh Sushma Raghuvansy, Jon P. McCandless, Marco Schowalter, Alexander Karg, Manuel Alonso-Orts, Martin S. Williams, Christian Tessarek, Stephan Figge, Kazuki Nomoto, Huili Grace Xing, Darrell G. Schlom, Andreas Rosenauer, Debdeep Jena, Martin Eickhoff, Patrick Vogt

    Diterbitkan 2023-11-01
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