Hasil Pencarian - M. D. Varentsov

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  1. 1
    Thermal annealing of clusters and point defects in n-Si (Cz) irradiated by fast-pile neutrons

    Thermal annealing of clusters and point defects in n-Si (Cz) irradiated by fast-pile neutrons oleh A. P. Dolgolenko, M. D. Varentsov, G. P. Gaidar, P. G. Litovchenko

    Diterbitkan 2008-08-01
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  2. 2
    Dependence of the defect introduction rate on irradiation dose of p-Si by fast-pile neutrons

    Dependence of the defect introduction rate on irradiation dose of p-Si by fast-pile neutrons oleh A. P. Dolgolenko, M. D. Varentsov, G. P. Gaidar, P. G. Litovchenko

    Diterbitkan 2007-06-01
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  3. 3
    Radiation hardness of silicon doped by germanium with high concentration of free oxygen

    Radiation hardness of silicon doped by germanium with high concentration of free oxygen oleh M. D. Varentsov, G. P. Gaidar, A. P. Dolgolenko, P. G. Litovchenko

    Diterbitkan 2006-06-01
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  4. 4
    Possibilities of increase of radiation firmness of semiconductor materials

    Possibilities of increase of radiation firmness of semiconductor materials oleh P. G. Litovchenko, L. I. Barabash, S. V. Berdnichenko, D. Bizello, M. D. Varentsov, V. I. Varnina, A. A.Groza, O. P. Dolgolenko, A. Ya. Karpenko, T. I. Kibkalo, V. F. Lastovetsky, A. P. Litovchenko, V. N. Pidtynnykh, L. A. Polivtsev, S. B. Smirnov, M. I. Starchik

    Diterbitkan 2008-08-01
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