Hasil Pencarian - Jordan Bouaziz
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Impact of the channel length on molybdenum disulfide field effect transistors with hafnia-based high-k dielectric gate oleh Yanxiao Sun, Gang Niu, Wei Ren, Jinyan Zhao, Yankun Wang, Heping Wu, Luyue Jiang, Liyan Dai, Ya-Hong Xie, Pedro Rojo Romeo, Jordan Bouaziz, Bertrand Vilquin
Diterbitkan 2021-06-01Dapatkan teks lengkap
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