Hasil Pencarian - Johannes Strassner

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  1. 1
    Lithography-Free Technology for the Preparation of Digital Microfluidic (DMF) Lab-Chips with Droplet Actuation by Optoelectrowetting (OEW)

    Lithography-Free Technology for the Preparation of Digital Microfluidic (DMF) Lab-Chips with Droplet Actuation by Optoelectrowetting (OEW) oleh Christoph Doering, Johannes Strassner, Henning Fouckhardt

    Diterbitkan 2022-01-01
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  2. 2
    Microdroplet Actuation via Light Line Optoelectrowetting (LL-OEW)

    Microdroplet Actuation via Light Line Optoelectrowetting (LL-OEW) oleh Christoph Doering, Johannes Strassner, Henning Fouckhardt

    Diterbitkan 2021-01-01
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  3. 3
    In-situ etch-depth control better than 5 nm with reflectance anisotropy spectroscopy (RAS) equipment during reactive ion etching (RIE): A technical RAS application

    In-situ etch-depth control better than 5 nm with reflectance anisotropy spectroscopy (RAS) equipment during reactive ion etching (RIE): A technical RAS application oleh Christoph Doering, Johannes Strassner, Henning Fouckhardt

    Diterbitkan 2019-07-01
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  4. 4
    In Situ and Real-Time Monitoring of Doping Levels by Reflectance Anisotropy Spectroscopy (RAS) during Molecular Beam Epitaxial (MBE) Growth of III/V Semiconductors

    In Situ and Real-Time Monitoring of Doping Levels by Reflectance Anisotropy Spectroscopy (RAS) during Molecular Beam Epitaxial (MBE) Growth of III/V Semiconductors oleh Henning Fouckhardt, Johannes Richter, Christoph Doering, Johannes Strassner

    Diterbitkan 2023-01-01
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  5. 5
    Reactive Ion Etching (RIE) Induced Surface Roughness Precisely Monitored In-Situ and in Real Time by Reflectance Anisotropy Spectroscopy (RAS) in Combination with Principle Component Analysis (PCA)

    Reactive Ion Etching (RIE) Induced Surface Roughness Precisely Monitored In-Situ and in Real Time by Reflectance Anisotropy Spectroscopy (RAS) in Combination with Principle Compone... oleh Emerson Oliveira, Johannes Strassner, Christoph Doering, Henning Fouckhardt

    Diterbitkan 2022-01-01
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  6. 6
    Epitaxial Growth of Optoelectronically Active Ga(As)Sb Quantum Dots on Al-Rich AlGaAs with GaAs Capsule Layers

    Epitaxial Growth of Optoelectronically Active Ga(As)Sb Quantum Dots on Al-Rich AlGaAs with GaAs Capsule Layers oleh Johannes Strassner, Johannes Richter, Thomas Loeber, Christoph Doering, Henning Fouckhardt

    Diterbitkan 2021-01-01
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  7. 7
    Doped or Quantum-Dot Layers as In Situ Etch-Stop Indicators for III/V Semiconductor Reactive Ion Etching (RIE) Using Reflectance Anisotropy Spectroscopy (RAS)

    Doped or Quantum-Dot Layers as In Situ Etch-Stop Indicators for III/V Semiconductor Reactive Ion Etching (RIE) Using Reflectance Anisotropy Spectroscopy (RAS) oleh Guilherme Sombrio, Emerson Oliveira, Johannes Strassner, Johannes Richter, Christoph Doering, Henning Fouckhardt

    Diterbitkan 2021-04-01
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  8. 8
    Precise in situ etch depth control of multilayered III−V semiconductor samples with reflectance anisotropy spectroscopy (RAS) equipment

    Precise in situ etch depth control of multilayered III−V semiconductor samples with reflectance anisotropy spectroscopy (RAS) equipment oleh Ann-Kathrin Kleinschmidt, Lars Barzen, Johannes Strassner, Christoph Doering, Henning Fouckhardt, Wolfgang Bock, Michael Wahl, Michael Kopnarski

    Diterbitkan 2016-11-01
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