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    A Graphene Geometric Diode with the Highest Asymmetry Ratio and Three States Gate‐Tunable Rectification Ability

    A Graphene Geometric Diode with the Highest Asymmetry Ratio and Three States Gate‐Tunable Rectification Ability oleh Heng Wang, Maolin Chen, Yiming Yang, Yinchang Ma, Linqu Luo, Chen Liu, Igor Getmanov, Thomas D. Anthopoulos, Xixiang Zhang, Atif Shamim

    Diterbitkan 2024-04-01
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