Hasil Pencarian - I. G. Atabaev

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  1. 1
    Research of p-i-n Junctions Based on 4H-SiC Fabricated by Low-Temperature Diffusion of Boron

    Research of p-i-n Junctions Based on 4H-SiC Fabricated by Low-Temperature Diffusion of Boron oleh I. G. Atabaev, Kh. N. Juraev

    Diterbitkan 2018-01-01
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  2. 2
    Spectral Dependence of Optical Absorption of 4H-SiC Doped with Boron and Aluminum

    Spectral Dependence of Optical Absorption of 4H-SiC Doped with Boron and Aluminum oleh I. G. Atabaev, Kh. N. Juraev, M. U. Hajiev

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  3. 3
    Fast Switching 4H-SiC P-i-n Structures Fabricated by Low Temperature Diffusion of Al

    Fast Switching 4H-SiC P-i-n Structures Fabricated by Low Temperature Diffusion of Al oleh I. G. Atabaev, Kh. N. Juraev, V. A. Pak

    Diterbitkan 2017-01-01
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