Hasil Pencarian - Hujun JIA

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  1. 1
    The application of UAV LiDAR and tilt photography in the early identification of geo-hazards

    The application of UAV LiDAR and tilt photography in the early identification of geo-hazards oleh Hujun JIA, Lijuan WANG, Dongli FAN

    Diterbitkan 2021-04-01
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  2. 2
    An Improved UU-MESFET with High Power Added Efficiency

    An Improved UU-MESFET with High Power Added Efficiency oleh Hujun Jia, Mei Hu, Shunwei Zhu

    Diterbitkan 2018-11-01
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  3. 3
    An Improved P-Type Doped Barrier Surface AlGaN/GaN High Electron Mobility Transistor with High Power-Added Efficiency

    An Improved P-Type Doped Barrier Surface AlGaN/GaN High Electron Mobility Transistor with High Power-Added Efficiency oleh Hujun Jia, Xiaowei Wang, Mengyu Dong, Shunwei Zhu, Yintang Yang

    Diterbitkan 2021-08-01
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  4. 4
    A Novel 4H-SiC MESFET with a Heavily Doped Region, a Lightly Doped Region and an Insulated Region

    A Novel 4H-SiC MESFET with a Heavily Doped Region, a Lightly Doped Region and an Insulated Region oleh Hujun Jia, Mengyu Dong, Xiaowei Wang, Shunwei Zhu, Yintang Yang

    Diterbitkan 2021-04-01
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  5. 5
    Improved MRD 4H-SiC MESFET with High Power Added Efficiency

    Improved MRD 4H-SiC MESFET with High Power Added Efficiency oleh Shunwei Zhu, Hujun Jia, Xingyu Wang, Yuan Liang, Yibo Tong, Tao Li, Yintang Yang

    Diterbitkan 2019-07-01
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  6. 6
    Novel High-Energy-Efficiency AlGaN/GaN HEMT with High Gate and Multi-Recessed Buffer

    Novel High-Energy-Efficiency AlGaN/GaN HEMT with High Gate and Multi-Recessed Buffer oleh Shunwei Zhu, Hujun Jia, Tao Li, Yibo Tong, Yuan Liang, Xingyu Wang, Tonghui Zeng, Yintang Yang

    Diterbitkan 2019-07-01
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  7. 7
    An Improved 4H-SiC MESFET with a Partially Low Doped Channel

    An Improved 4H-SiC MESFET with a Partially Low Doped Channel oleh Hujun Jia, Yibo Tong, Tao Li, Shunwei Zhu, Yuan Liang, Xingyu Wang, Tonghui Zeng, Yintang Yang

    Diterbitkan 2019-08-01
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  8. 8
    Improved DRUS 4H-SiC MESFET with High Power Added Efficiency

    Improved DRUS 4H-SiC MESFET with High Power Added Efficiency oleh Hujun Jia, Yuan Liang, Tao Li, Yibo Tong, Shunwei Zhu, Xingyu Wang, Tonghui Zeng, Yintang Yang

    Diterbitkan 2019-12-01
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