Hasil Pencarian - Huffaker DL

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    Structural Analysis of Highly Relaxed GaSb Grown on GaAs Substrates with Periodic Interfacial Array of 90° Misfit Dislocations

    Structural Analysis of Highly Relaxed GaSb Grown on GaAs Substrates with Periodic Interfacial Array of 90° Misfit Dislocations oleh Balakrishnan G, Rotter TJ, Dawson LR, Nunna K, Liang BL, Huang SH, Jallipalli A, Huffaker DL

    Diterbitkan 2009-01-01
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