Hasil Pencarian - Hojeong Ryu

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  1. 1
    Volatile Resistive Switching Characteristics of Pt/HfO<sub>2</sub>/TaO<i><sub>x</sub></i>/TiN Short-Term Memory Device

    Volatile Resistive Switching Characteristics of Pt/HfO<sub>2</sub>/TaO<i><sub>x</sub></i>/TiN Short-Term Memory Device oleh Hojeong Ryu, Sungjun Kim

    Diterbitkan 2021-07-01
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  2. 2
    Gradually Tunable Conductance in TiO<sub>2</sub>/Al<sub>2</sub>O<sub>3</sub> Bilayer Resistors for Synaptic Device

    Gradually Tunable Conductance in TiO<sub>2</sub>/Al<sub>2</sub>O<sub>3</sub> Bilayer Resistors for Synaptic Device oleh Hojeong Ryu, Sungjun Kim

    Diterbitkan 2021-03-01
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  3. 3
    Synaptic Characteristics from Homogeneous Resistive Switching in Pt/Al<sub>2</sub>O<sub>3</sub>/TiN Stack

    Synaptic Characteristics from Homogeneous Resistive Switching in Pt/Al<sub>2</sub>O<sub>3</sub>/TiN Stack oleh Hojeong Ryu, Sungjun Kim

    Diterbitkan 2020-10-01
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  4. 4
    Gradually Modified Conductance in the Self-Compliance Region of an Atomic-Layer-Deposited Pt/TiO2/HfAlOx/TiN RRAM Device

    Gradually Modified Conductance in the Self-Compliance Region of an Atomic-Layer-Deposited Pt/TiO2/HfAlOx/TiN RRAM Device oleh Hojeong Ryu, Sungjun Kim

    Diterbitkan 2021-07-01
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  5. 5
    Improved Pulse-Controlled Conductance Adjustment in Trilayer Resistors by Suppressing Current Overshoot

    Improved Pulse-Controlled Conductance Adjustment in Trilayer Resistors by Suppressing Current Overshoot oleh Hojeong Ryu, Sungjun Kim

    Diterbitkan 2020-12-01
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  6. 6
    Pseudo-Interface Switching of a Two-Terminal TaO<i><sub>x</sub></i>/HfO<sub>2</sub> Synaptic Device for Neuromorphic Applications

    Pseudo-Interface Switching of a Two-Terminal TaO<i><sub>x</sub></i>/HfO<sub>2</sub> Synaptic Device for Neuromorphic Applications oleh Hojeong Ryu, Sungjun Kim

    Diterbitkan 2020-08-01
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  7. 7
    Self-Rectifying Resistive Switching and Short-Term Memory Characteristics in Pt/HfO<sub>2</sub>/TaO<i><sub>x</sub></i>/TiN Artificial Synaptic Device

    Self-Rectifying Resistive Switching and Short-Term Memory Characteristics in Pt/HfO<sub>2</sub>/TaO<i><sub>x</sub></i>/TiN Artificial Synaptic Device oleh Hojeong Ryu, Sungjun Kim

    Diterbitkan 2020-10-01
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  8. 8
    Irregular Resistive Switching Behaviors of Al<sub>2</sub>O<sub>3</sub>-Based Resistor with Cu Electrode

    Irregular Resistive Switching Behaviors of Al<sub>2</sub>O<sub>3</sub>-Based Resistor with Cu Electrode oleh Hojeong Ryu, Sungjun Kim

    Diterbitkan 2021-04-01
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  9. 9
    Effects of Oxygen Precursor on Resistive Switching Properties of CMOS Compatible HfO<sub>2</sub>-Based RRAM

    Effects of Oxygen Precursor on Resistive Switching Properties of CMOS Compatible HfO<sub>2</sub>-Based RRAM oleh Hojeong Ryu, Sungjun Kim

    Diterbitkan 2021-08-01
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  10. 10
    Bias Polarity Dependent Threshold Switching and Bipolar Resistive Switching of TiN/TaO<i><sub>x</sub></i>/ITO Device

    Bias Polarity Dependent Threshold Switching and Bipolar Resistive Switching of TiN/TaO<i><sub>x</sub></i>/ITO Device oleh Hojeong Ryu, Beomjun Park, Sungjun Kim

    Diterbitkan 2021-09-01
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  11. 11
    Nonideal resistive and synaptic characteristics in Ag/ZnO/TiN device for neuromorphic system

    Nonideal resistive and synaptic characteristics in Ag/ZnO/TiN device for neuromorphic system oleh Jongmin Park, Hojeong Ryu, Sungjun Kim

    Diterbitkan 2021-08-01
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  12. 12
    Multi-Level Resistive Switching of Pt/HfO<sub>2</sub>/TaN Memory Device

    Multi-Level Resistive Switching of Pt/HfO<sub>2</sub>/TaN Memory Device oleh Hojeong Ryu, Hoeje Jung, Kisong Lee, Sungjun Kim

    Diterbitkan 2021-11-01
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  13. 13
    Improved Synaptic Device Properties of HfAlO<i><sub>x</sub></i> Dielectric on Highly Doped Silicon Substrate by Partial Reset Process

    Improved Synaptic Device Properties of HfAlO<i><sub>x</sub></i> Dielectric on Highly Doped Silicon Substrate by Partial Reset Process oleh Seunghyun Kim, Osung Kwon, Hojeong Ryu, Sungjun Kim

    Diterbitkan 2021-05-01
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