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    Electron mobility enhancement in solution-processed low-voltage In2O3 transistors via channel interface planarization

    Electron mobility enhancement in solution-processed low-voltage In2O3 transistors via channel interface planarization oleh Alexander D. Mottram, Pichaya Pattanasattayavong, Ivan Isakov, Gwen Wyatt-Moon, Hendrik Faber, Yen-Hung Lin, Thomas D. Anthopoulos

    Diterbitkan 2018-06-01
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