Hasil Pencarian - G. H. Ryu

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    Microcavity Effect in InAs/GaAs Quantum Dot Infrared Photodetector on a Si Substrate Fabricated With Metal Wafer Bonding and Epitaxial Lift-Off Techniques

    Microcavity Effect in InAs/GaAs Quantum Dot Infrared Photodetector on a Si Substrate Fabricated With Metal Wafer Bonding and Epitaxial Lift-Off Techniques oleh Ho Sung Kim, G. H. Ryu, S. Y. Ahn, H. Y. Ryu, W. J. Choi

    Diterbitkan 2019-01-01
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