Hasil Pencarian - Feng-Tso Chien

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  1. 1
    Thin-Film Transistors

    Thin-Film Transistors oleh Feng-Tso Chien, Yu-Wei Chang, Jo-Chin Liu

    Diterbitkan 2022-04-01
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  2. 2
    High Threshold Voltage Normally off Ultra-Thin-Barrier GaN MISHEMT with MOCVD-Regrown Ohmics and Si-Rich LPCVD-SiNx Gate Insulator

    High Threshold Voltage Normally off Ultra-Thin-Barrier GaN MISHEMT with MOCVD-Regrown Ohmics and Si-Rich LPCVD-SiNx Gate Insulator oleh Hsiang-Chun Wang, Hsien-Chin Chiu, Chong-Rong Huang, Hsuan-Ling Kao, Feng-Tso Chien

    Diterbitkan 2020-05-01
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  3. 3
    Raised Source/Drain (RSD) and Vertical Lightly Doped Drain (LDD) Poly-Si Thin-Film Transistor

    Raised Source/Drain (RSD) and Vertical Lightly Doped Drain (LDD) Poly-Si Thin-Film Transistor oleh Feng-Tso Chien, Jing Ye, Wei-Cheng Yen, Chii-Wen Chen, Cheng-Li Lin, Yao-Tsung Tsai

    Diterbitkan 2021-02-01
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  4. 4
    150–200 V Split-Gate Trench Power MOSFETs with Multiple Epitaxial Layers

    150–200 V Split-Gate Trench Power MOSFETs with Multiple Epitaxial Layers oleh Feng-Tso Chien, Zhi-Zhe Wang, Cheng-Li Lin, Tsung-Kuei Kang, Chii-Wen Chen, Hsien-Chin Chiu

    Diterbitkan 2020-05-01
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  5. 5
    2.4 kV Vertical GaN PN Diodes on Free Standing GaN Wafer Using CMOS-Compatible Contact Materials

    2.4 kV Vertical GaN PN Diodes on Free Standing GaN Wafer Using CMOS-Compatible Contact Materials oleh Xinke Liu, Hsien-Chin Chiu, Hou-Yu Wang, Cong Hu, Hsiang-Chun Wang, Hsuan-Ling Kao, Feng-Tso Chien

    Diterbitkan 2018-01-01
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  6. 6
    Dynamic Behavior Improvement of Normally-Off p-GaN High-Electron-Mobility Transistor Through a Low-Temperature Microwave Annealing Process

    Dynamic Behavior Improvement of Normally-Off p-GaN High-Electron-Mobility Transistor Through a Low-Temperature Microwave Annealing Process oleh Hsien-Chin Chiu, Chia-Hao Liu, Yi-Sheng Chang, Hsuan-Ling Kao, Rong Xuan, Chih-Wei Hu, Feng-Tso Chien

    Diterbitkan 2019-01-01
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  7. 7
    Normally-Off p-GaN Gated AlGaN/GaN MIS-HEMTs with ALD-Grown Al<sub>2</sub>O<sub>3</sub>/AlN Composite Gate Insulator

    Normally-Off p-GaN Gated AlGaN/GaN MIS-HEMTs with ALD-Grown Al<sub>2</sub>O<sub>3</sub>/AlN Composite Gate Insulator oleh Hsien-Chin Chiu, Chia-Hao Liu, Chong-Rong Huang, Chi-Chuan Chiu, Hsiang-Chun Wang, Hsuan-Ling Kao, Shinn-Yn Lin, Feng-Tso Chien

    Diterbitkan 2021-09-01
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