Hasil Pencarian - Fei-Bing Xiong

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  1. 1
    Improved carrier confinement and distribution in InGaN light-emitting diodes with three-layer staggered QWs

    Improved carrier confinement and distribution in InGaN light-emitting diodes with three-layer staggered QWs oleh Li-E. Cai, Chao-Zhi Xu, Fei-Bing Xiong, Ming-Jie Zhao, Hai-Feng Lin, Hong-Yi Lin, Dong Sun

    Diterbitkan 2021-07-01
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  2. 2
    Erratum: “Improved carrier confinement and distribution in InGaN light-emitting diodes with three-layer staggered QWs” [AIP Adv. 11, 075027 (2021)]

    Erratum: “Improved carrier confinement and distribution in InGaN light-emitting diodes with three-layer staggered QWs” [AIP Adv. 11, 075027 (2021)] oleh Li-E. Cai, Chao-Zhi Xu, Fei-Bing Xiong, Ming-Jie Zhao, Hai-Feng Lin, Hong-Yi Lin, Dong Sun

    Diterbitkan 2021-11-01
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  3. 3
    Temperature-Dependent HfO2/Si Interface Structural Evolution and its Mechanism

    Temperature-Dependent HfO2/Si Interface Structural Evolution and its Mechanism oleh Xiao-Ying Zhang, Chia-Hsun Hsu, Shui-Yang Lien, Wan-Yu Wu, Sin-Liang Ou, Song-Yan Chen, Wei Huang, Wen-Zhang Zhu, Fei-Bing Xiong, Sam Zhang

    Diterbitkan 2019-03-01
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  4. 4
    Surface Passivation of Silicon Using HfO2 Thin Films Deposited by Remote Plasma Atomic Layer Deposition System

    Surface Passivation of Silicon Using HfO2 Thin Films Deposited by Remote Plasma Atomic Layer Deposition System oleh Xiao-Ying Zhang, Chia-Hsun Hsu, Shui-Yang Lien, Song-Yan Chen, Wei Huang, Chih-Hsiang Yang, Chung-Yuan Kung, Wen-Zhang Zhu, Fei-Bing Xiong, Xian-Guo Meng

    Diterbitkan 2017-05-01
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