Hasil Pencarian - Farid Medjdoub

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  1. 1
    Editorial for the Special Issue on Wide Bandgap Based Devices: Design, Fabrication and Applications

    Editorial for the Special Issue on Wide Bandgap Based Devices: Design, Fabrication and Applications oleh Farid Medjdoub

    Diterbitkan 2021-01-01
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  2. 2
    High Performance and Highly Robust AlN/GaN HEMTs for Millimeter-Wave Operation

    High Performance and Highly Robust AlN/GaN HEMTs for Millimeter-Wave Operation oleh Kathia Harrouche, Riad Kabouche, Etienne Okada, Farid Medjdoub

    Diterbitkan 2019-01-01
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  3. 3
    Low Buffer Trapping Effects above 1200 V in Normally off GaN-on-Silicon Field Effect Transistors

    Low Buffer Trapping Effects above 1200 V in Normally off GaN-on-Silicon Field Effect Transistors oleh Idriss Abid, Youssef Hamdaoui, Jash Mehta, Joff Derluyn, Farid Medjdoub

    Diterbitkan 2022-09-01
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  4. 4
    Demonstration of avalanche capability in 800 V vertical GaN-on-silicon diodes

    Demonstration of avalanche capability in 800 V vertical GaN-on-silicon diodes oleh Youssef Hamdaoui, Idriss Abid, Sondre Michler, Katir Ziouche, Farid Medjdoub

    Diterbitkan 2023-01-01
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  5. 5
    Low Trapping Effects and High Electron Confinement in Short AlN/GaN-On-SiC HEMTs by Means of a Thin AlGaN Back Barrier

    Low Trapping Effects and High Electron Confinement in Short AlN/GaN-On-SiC HEMTs by Means of a Thin AlGaN Back Barrier oleh Kathia Harrouche, Srisaran Venkatachalam, Lyes Ben-Hammou, François Grandpierron, Etienne Okada, Farid Medjdoub

    Diterbitkan 2023-01-01
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  6. 6
    Optimization of Non-Alloyed Backside Ohmic Contacts to N-Face GaN for Fully Vertical GaN-on-Silicon-Based Power Devices

    Optimization of Non-Alloyed Backside Ohmic Contacts to N-Face GaN for Fully Vertical GaN-on-Silicon-Based Power Devices oleh Youssef Hamdaoui, Sofie S. T. Vandenbroucke, Sondre Michler, Katir Ziouche, Matthias M. Minjauw, Christophe Detavernier, Farid Medjdoub

    Diterbitkan 2024-09-01
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  7. 7
    High Lateral Breakdown Voltage in Thin Channel AlGaN/GaN High Electron Mobility Transistors on AlN/Sapphire Templates

    High Lateral Breakdown Voltage in Thin Channel AlGaN/GaN High Electron Mobility Transistors on AlN/Sapphire Templates oleh Idriss Abid, Riad Kabouche, Catherine Bougerol, Julien Pernot, Cedric Masante, Remi Comyn, Yvon Cordier, Farid Medjdoub

    Diterbitkan 2019-10-01
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  8. 8
    GaN-Based Laser Wireless Power Transfer System

    GaN-Based Laser Wireless Power Transfer System oleh Carlo De Santi, Matteo Meneghini, Alessandro Caria, Ezgi Dogmus, Malek Zegaoui, Farid Medjdoub, Boris Kalinic, Tiziana Cesca, Gaudenzio Meneghesso, Enrico Zanoni

    Diterbitkan 2018-01-01
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  9. 9
    High Breakdown Voltage and Low Buffer Trapping in Superlattice GaN-on-Silicon Heterostructures for High Voltage Applications

    High Breakdown Voltage and Low Buffer Trapping in Superlattice GaN-on-Silicon Heterostructures for High Voltage Applications oleh Alaleh Tajalli, Matteo Meneghini, Sven Besendörfer, Riad Kabouche, Idriss Abid, Roland Püsche, Joff Derluyn, Stefan Degroote, Marianne Germain, Elke Meissner, Enrico Zanoni, Farid Medjdoub, Gaudenzio Meneghesso

    Diterbitkan 2020-09-01
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  10. 10
    Vertical Leakage in GaN-on-Si Stacks Investigated by a Buffer Decomposition Experiment

    Vertical Leakage in GaN-on-Si Stacks Investigated by a Buffer Decomposition Experiment oleh Alaleh Tajalli, Matteo Borga, Matteo Meneghini, Carlo De Santi, Davide Benazzi, Sven Besendörfer, Roland Püsche, Joff Derluyn, Stefan Degroote, Marianne Germain, Riad Kabouche, Idriss Abid, Elke Meissner, Enrico Zanoni, Farid Medjdoub, Gaudenzio Meneghesso

    Diterbitkan 2020-01-01
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