Hasil Pencarian - Ernest Brzozowski

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    Carrier Trap Density Reduction at SiO<sub>2</sub>/4H-Silicon Carbide Interface with Annealing Processes in Phosphoryl Chloride and Nitride Oxide Atmospheres

    Carrier Trap Density Reduction at SiO<sub>2</sub>/4H-Silicon Carbide Interface with Annealing Processes in Phosphoryl Chloride and Nitride Oxide Atmospheres oleh Ernest Brzozowski, Maciej Kaminski, Andrzej Taube, Oskar Sadowski, Krystian Krol, Marek Guziewicz

    Diterbitkan 2023-06-01
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