Hasil Pencarian - Sungjun Kim

Perbaiki Hasil
  1. 1
    Volatile Resistive Switching Characteristics of Pt/HfO<sub>2</sub>/TaO<i><sub>x</sub></i>/TiN Short-Term Memory Device

    Volatile Resistive Switching Characteristics of Pt/HfO<sub>2</sub>/TaO<i><sub>x</sub></i>/TiN Short-Term Memory Device oleh Hojeong Ryu, Sungjun Kim

    Diterbitkan 2021-07-01
    Dapatkan teks lengkap
    Artikel
    Simpan ke Daftar
    Disimpan di:
  2. 2
    Gradually Tunable Conductance in TiO<sub>2</sub>/Al<sub>2</sub>O<sub>3</sub> Bilayer Resistors for Synaptic Device

    Gradually Tunable Conductance in TiO<sub>2</sub>/Al<sub>2</sub>O<sub>3</sub> Bilayer Resistors for Synaptic Device oleh Hojeong Ryu, Sungjun Kim

    Diterbitkan 2021-03-01
    Dapatkan teks lengkap
    Artikel
    Simpan ke Daftar
    Disimpan di:
  3. 3
    Synaptic Characteristics from Homogeneous Resistive Switching in Pt/Al<sub>2</sub>O<sub>3</sub>/TiN Stack

    Synaptic Characteristics from Homogeneous Resistive Switching in Pt/Al<sub>2</sub>O<sub>3</sub>/TiN Stack oleh Hojeong Ryu, Sungjun Kim

    Diterbitkan 2020-10-01
    Dapatkan teks lengkap
    Artikel
    Simpan ke Daftar
    Disimpan di:
  4. 4
    Gradually Modified Conductance in the Self-Compliance Region of an Atomic-Layer-Deposited Pt/TiO2/HfAlOx/TiN RRAM Device

    Gradually Modified Conductance in the Self-Compliance Region of an Atomic-Layer-Deposited Pt/TiO2/HfAlOx/TiN RRAM Device oleh Hojeong Ryu, Sungjun Kim

    Diterbitkan 2021-07-01
    Dapatkan teks lengkap
    Artikel
    Simpan ke Daftar
    Disimpan di:
  5. 5
    Improved Pulse-Controlled Conductance Adjustment in Trilayer Resistors by Suppressing Current Overshoot

    Improved Pulse-Controlled Conductance Adjustment in Trilayer Resistors by Suppressing Current Overshoot oleh Hojeong Ryu, Sungjun Kim

    Diterbitkan 2020-12-01
    Dapatkan teks lengkap
    Artikel
    Simpan ke Daftar
    Disimpan di:
  6. 6
    Volatile tin oxide memristor for neuromorphic computing

    Volatile tin oxide memristor for neuromorphic computing oleh Dongyeol Ju, Sungjun Kim

    Diterbitkan 2024-08-01
    Dapatkan teks lengkap
    Artikel
    Simpan ke Daftar
    Disimpan di:
  7. 7
    Improved Stability and Controllability in ZrN-Based Resistive Memory Device by Inserting TiO<sub>2</sub> Layer

    Improved Stability and Controllability in ZrN-Based Resistive Memory Device by Inserting TiO<sub>2</sub> Layer oleh Junhyeok Choi, Sungjun Kim

    Diterbitkan 2020-09-01
    Dapatkan teks lengkap
    Artikel
    Simpan ke Daftar
    Disimpan di:
  8. 8
    Temporal multibit operation of dynamic memristor for reservoir computing

    Temporal multibit operation of dynamic memristor for reservoir computing oleh Dongyeol Ju, Sungjun Kim

    Diterbitkan 2024-06-01
    Dapatkan teks lengkap
    Artikel
    Simpan ke Daftar
    Disimpan di:
  9. 9
    The Influence of Urban Planning-Related Pledge Budget on Local Election Votes: A City Case in Korea

    The Influence of Urban Planning-Related Pledge Budget on Local Election Votes: A City Case in Korea oleh Sungjun Kim, Changmu Jung

    Diterbitkan 2020-12-01
    Dapatkan teks lengkap
    Artikel
    Simpan ke Daftar
    Disimpan di:
  10. 10
    Short-Term Memory Dynamics of TiN/Ti/TiO<sub>2</sub>/SiO<i><sub>x</sub></i>/Si Resistive Random Access Memory

    Short-Term Memory Dynamics of TiN/Ti/TiO<sub>2</sub>/SiO<i><sub>x</sub></i>/Si Resistive Random Access Memory oleh Hyojong Cho, Sungjun Kim

    Diterbitkan 2020-09-01
    Dapatkan teks lengkap
    Artikel
    Simpan ke Daftar
    Disimpan di:
  11. 11
    Improving endurance and reliability by optimizing the alternating voltage in Pt/ZnO/TiN RRAM

    Improving endurance and reliability by optimizing the alternating voltage in Pt/ZnO/TiN RRAM oleh Jongmin Park, Sungjun Kim

    Diterbitkan 2022-08-01
    Dapatkan teks lengkap
    Artikel
    Simpan ke Daftar
    Disimpan di:
  12. 12
    Pseudo-Interface Switching of a Two-Terminal TaO<i><sub>x</sub></i>/HfO<sub>2</sub> Synaptic Device for Neuromorphic Applications

    Pseudo-Interface Switching of a Two-Terminal TaO<i><sub>x</sub></i>/HfO<sub>2</sub> Synaptic Device for Neuromorphic Applications oleh Hojeong Ryu, Sungjun Kim

    Diterbitkan 2020-08-01
    Dapatkan teks lengkap
    Artikel
    Simpan ke Daftar
    Disimpan di:
  13. 13
    Emulation of Biological Synapse Characteristics from Cu/AlN/TiN Conductive Bridge Random Access Memory

    Emulation of Biological Synapse Characteristics from Cu/AlN/TiN Conductive Bridge Random Access Memory oleh Hyojong Cho, Sungjun Kim

    Diterbitkan 2020-08-01
    Dapatkan teks lengkap
    Artikel
    Simpan ke Daftar
    Disimpan di:
  14. 14
    Self-Rectifying Resistive Switching and Short-Term Memory Characteristics in Pt/HfO<sub>2</sub>/TaO<i><sub>x</sub></i>/TiN Artificial Synaptic Device

    Self-Rectifying Resistive Switching and Short-Term Memory Characteristics in Pt/HfO<sub>2</sub>/TaO<i><sub>x</sub></i>/TiN Artificial Synaptic Device oleh Hojeong Ryu, Sungjun Kim

    Diterbitkan 2020-10-01
    Dapatkan teks lengkap
    Artikel
    Simpan ke Daftar
    Disimpan di:
  15. 15
    Irregular Resistive Switching Behaviors of Al<sub>2</sub>O<sub>3</sub>-Based Resistor with Cu Electrode

    Irregular Resistive Switching Behaviors of Al<sub>2</sub>O<sub>3</sub>-Based Resistor with Cu Electrode oleh Hojeong Ryu, Sungjun Kim

    Diterbitkan 2021-04-01
    Dapatkan teks lengkap
    Artikel
    Simpan ke Daftar
    Disimpan di:
  16. 16
    Effects of Oxygen Precursor on Resistive Switching Properties of CMOS Compatible HfO<sub>2</sub>-Based RRAM

    Effects of Oxygen Precursor on Resistive Switching Properties of CMOS Compatible HfO<sub>2</sub>-Based RRAM oleh Hojeong Ryu, Sungjun Kim

    Diterbitkan 2021-08-01
    Dapatkan teks lengkap
    Artikel
    Simpan ke Daftar
    Disimpan di:
  17. 17
    Improved Intrinsic Nonlinear Characteristics of Ta<sub>2</sub>O<sub>5</sub>/Al<sub>2</sub>O<sub>3</sub>-Based Resistive Random-Access Memory for High-Density Memory Applications

    Improved Intrinsic Nonlinear Characteristics of Ta<sub>2</sub>O<sub>5</sub>/Al<sub>2</sub>O<sub>3</sub>-Based Resistive Random-Access Memory for High-Density Memory Applications oleh Ji-Ho Ryu, Sungjun Kim

    Diterbitkan 2020-09-01
    Dapatkan teks lengkap
    Artikel
    Simpan ke Daftar
    Disimpan di:
  18. 18
    Resistive Switching Characteristics of ZnO-Based RRAM on Silicon Substrate

    Resistive Switching Characteristics of ZnO-Based RRAM on Silicon Substrate oleh Dahye Kim, Jiwoong Shin, Sungjun Kim

    Diterbitkan 2021-10-01
    Dapatkan teks lengkap
    Artikel
    Simpan ke Daftar
    Disimpan di:
  19. 19
    Improved Resistive Switching Characteristics and Synaptic Functions of InZnO/SiO<sub>2</sub> Bilayer Device

    Improved Resistive Switching Characteristics and Synaptic Functions of InZnO/SiO<sub>2</sub> Bilayer Device oleh Dongyeol Ju, Minsuk Koo, Sungjun Kim

    Diterbitkan 2023-11-01
    Dapatkan teks lengkap
    Artikel
    Simpan ke Daftar
    Disimpan di:
  20. 20
    Bias Polarity Dependent Threshold Switching and Bipolar Resistive Switching of TiN/TaO<i><sub>x</sub></i>/ITO Device

    Bias Polarity Dependent Threshold Switching and Bipolar Resistive Switching of TiN/TaO<i><sub>x</sub></i>/ITO Device oleh Hojeong Ryu, Beomjun Park, Sungjun Kim

    Diterbitkan 2021-09-01
    Dapatkan teks lengkap
    Artikel
    Simpan ke Daftar
    Disimpan di:

Alat Pencarian: